Charles Cornet Home Page

 

Charles Cornet, Ph. D.,

Maître de conférences

(Ass. Prof. Hab.)

Habilité à diriger

 les recherches

 

Contact:

charles.cornet@insa-rennes.fr

+33 (0) 223 238 399

Institut National des Sciences Appliquées,

Laboratoire FOTON – bât. 10

20, avenue des buttes de Coësmes

CS 70839

F – 35708 Rennes Cedex 7

France

 

Fields of expertiseResearch projectsAwardsShort CVTeaching InterestsPublications

 

Fields of expertise

 

-III-V semiconductors and Silicon

-Ultra-High Vacuum deposition techniques, such as Molecular Beam Epitaxy (MBE) and Chemical Vapor Deposition (CVD)

-Atomic Force Microscopy (AFM) and related near-field techniques

-Surface and volume diffraction (RHEED and basic XRD concepts)

-Physics of semiconductors: modeling of nanostructures, bandstructures, bandlineups

-Optical properties of semiconductors compounds and devices

 

Research projects

 

*2015-2018: ANR “collaboratif” project: “Advanced aNalysis of III-V/Si nucleaTIon for highly integrated PhOtonic Devices (ANTIPODE)”: coordinator, growth and modeling.

*2014-2017: Labex CominLabs project: “3D many-core architectures based on optical network on chip (3D OPTICAL MANY CORES)”: MBE-UHVCVD growth.

*2011-2014: National (3) and international (1) beam time allocation at European Synchrotron Radiation Facility (ESRF) on CRG lines D2AM and BM-32.

*2012-2016: ANR “blanc” project: “Epitaxial integration of III-V optoelectronic devices on silicon (OPTOSI)”: MBE-UHVCVD growth.

*2012-2014: ANR young researcher grant (projet jeune chercheur ANR): “Silicon photonics with diluted nitride coherent integration (SINPHONIC)”: coordinator, MBE-UHVCVD growth.

*2011-2014: ANR PROGELEC project: “Monolithic integration of high efficiency III-V solar cells on silicon (MENHIRS)”: MBE-UHVCVD growth.

*2011-2012: C’nano NANOTRANS project (C’nano Nord-ouest): “dilute nitride quantum dots: relationship between morphology, electronic structure and optical properties : joint coordinator, MBE growth.

*2004-2007: European network of excellence on Self-Assembled semiconductor Nanostructures for new Devices in photonics and Electronics (SANDiE)

*2004-2007: European Network of Excellence on Photonic Integrated Components and Circuits (EPIXNET)

 

Awards

 

* Innovation award of the “pôle de compétitivité Images et Réseaux”, for the SINPHONIC ANR project (2013).

 

* Young researcher award of “Région Bretagne” (2007)

 

* Best Ph. D. prize of the SANDiE European network of excellence (2006)

 

Short CV

 

2007-present: INSA, Rennes, France

Position : “Maître de Conférences” (Ass. Prof., HDR), at FOTON CNRS Laboratory. Co-head of the “photonics on silicon” research program.

Research topic: growth, structural and optical properties of GaP-based light emitters/absorbers on silicon for laser and photovoltaic applications.

 

2006–2007: INSA Rennes, France

Position: Post-doctoral fellow with teaching activities at FOTON CNRS Laboratory.

Research topic: Growth and characterization of InAs/GaP quantum dots.

 

2003–2006: INSA, Rennes (France), TU Berlin (Germany) and KU Leuven (Belgium)

Position: Physics PhD Thesis on “electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate” at INSA-Rennes (France) in collaboration with TU Berlin, KU Leuven and TU Eindhoven within European network of excellence SANDIE.

PhD Thesis supervised by Pr. J. Even.

Research topic: Electronic, optical and dynamic properties of self-organized and coupled quantum dots on InP substrate.

 

2003: “Diplôme d’Etudes Approfondies” (DEA = MSc2 degree) of Physics: light and matter interaction, at University of Rennes 1, France. Highest distinction, ranked first.

Position: Master 2 training period at LENS laboratory (“Laboratoire d’Etude des Nanostructures à Semiconducteurs”).

Research topic: Absorption measurements and simulations of InAs/InP (113)B quantum dots.

 

2001-2002: “Agrégation de Physique” passed at Ecole Normale Supérieure (ENS – Paris, France).

 

2001: Center for Quantum Electronics, Hanoi (Vietnam)

Position: Master 1 training period at CQE laboratory

Research topic: Time-resolved spectroscopy of tunable dye lasers

 

…-2000: Paris-Sud University, Orsay (France)

“Licence”, “Maîtrise” and “Magistère” (BSc and MSc1 degrees) of fundamental physics at Paris-Sud University (Université Paris XI – Orsay, France) 

Position: BSc training period at “Laboratory of the linear accelerator” (particle physics)

Research topic: Analysis of DIRC performances in the frame of the Babar experiment

 

 

Teaching Interests

 

* Energetics and environment: from nuclear to renewable energies. Here are few exams which have been proposed (in french): 2007, 2008, 2009, 2010, 2011, 2012.

* Applied quantum mechanics (quantum mechanic for beginners). Here are few exams proposed (French): 2007, 2008, 2009, 2010, 2011, 2013

* Thermodynamics. Here are few exams proposed (French): 2009, 2010, as well as practical works (English): 2014

 

List of publications

 

 

a) –Publications and proceedings

 

 Publications:

 

 

*S. Almosni, P. Râle, C. Cornet, M. Perrin, L. Lombez, A. Létoublon, K. Tavernier, C. Levallois, T. Rohel, N. Bertru, J.F. Guillemoles and O. Durand. “Correlations between electrical and optical properties in lattice-matched GaAsPN/GaP solar cells”, Solar Energy Materials and Solar Cells 147, 53 (2016).

 

*A Rolland, L Pedesseau, A Beck, M Kepenekian, C Katan, Y Huang, S Wang, C Cornet, O Durand, J Even “Computational design of high performance hybrid perovskite on silicon tandem solar cells”, arXiv preprint arXiv:1509.01612  (2015).

 

*Y. Ping Wang, J. Stodolna, M. Bahri, J. Kuyyalil, T. Nguyen Thanh, S. Almosni, R. Bernard, R. Tremblay, M. Da Silva, A. Létoublon, T. Rohel, K.Tavernier, L. Largeau, G. Patriarche, A. Le Corre, A. Ponchet, C. Magen, C. Cornet, O.Durand. “Abrupt GaP/Si hetero-interface using bistepped Si buffer”, Applied Physics Letters 107, 191603 (2015).

 

*Y. Ping Wang, A. Letoublon, T. Nguyen Thanh, M. Bahri, L. Largeau, G. Patriarche, C. Cornet, N. Bertru, A. Le Corre and O. Durand. “Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III–V photonics platform on silicon using a laboratory X-ray diffraction setup”, Journal of Applied Crystallography, 48, 702 (2015).

 

*S. Ilahi, N. Yacoubi, S. Almosni, F. Chouchane, M. Perrin, K. Zelazna, R. Kudrawiec, P. Râle, L. Lombez, J.-F. Guillemoles, O. Durand and C. Cornet. “Optical absorption and thermal conductivity of GaAsPN absorbers grown on GaP in view of their use in multijunction solar cells”, Solar Energy Materials and Solar Cells 141, 291 (2015).

 

*J.-P. Gauthier, C. Robert, S. Almosni, Y. Léger, M. Perrin, J. Even, A. Balocchi, H. Carrere, X. Marie, C. Cornet, and O. Durand. “Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots”, Applied Physics Letters 105, 243111 (2014).

 

*A. Lukyanova, F. Mandorlo, C. Cornet, O. Durand, M. Lemiti. “Effect of the III-V material properties on a III-V/Si tandem solar cell”, Solar Energy Materials and Solar Cells (submitted) (2014).

 

*O. Durand, S. Almosni, Y. Ping Wang, C. Cornet, A. Létoublon, C. Robert, C. Levallois, L. Pedesseau, A. Rolland,  J. Even, J.M. Jancu, N. Bertru, A. Le Corre, F. Mandorlo, M. Lemiti, P. Rale, L. Lombez, J.-F. Guillemoles, S. Laribi, A. Ponchet, J. Stodolna. “Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates: toward the III-V/Si Concentrated Photovoltaics”, Energy Harvesting and Systems 1, 147 (2014).

 

*C. Cornet. “Contribution to the study of monolithic integration of III-V semiconductors on silicon in the pseudomorphic approach for photonics and photovoltaics”, “Habilitation à diriger les recherches” Thesis from Université Rennes 1 (2014).

 

*J. Even, L. Pedesseau, E. Tea, S. Almosni, A. Rolland, C. Robert, J.-M. Jancu, C. Cornet, C. Katan, J.-F. Guillemoles and O. Durand. “Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructures”, International Journal of Photoenergy 2014, 649408 (2014).

 

*A. Rolland, L. Pedesseau, J. Even, S. Almosni, C. Robert, C. Cornet, J.-M. Jancu, J. Benhlal, O. Durand, A. Le Corre, P. Rale, L. Lombez, J.-F. Guillemoles, E. Tea and S. Laribi. “Design of a lattice-matched III–V–N/Si photovoltaic tandem cell monolithically integrated on silicon substrate”, Optical and Quantum Electronics, doi : 10.1007/s11082-014-9909-z (2014).

 

*E. Tea, J. Vidal, L. Pedesseau, C. Cornet, J.-M. Jancu, J. Even, S. Laribi, J.-F. Guillemoles and O. Durand. “Theoretical study of optical properties of anti phase domains in GaP”, Journal of Applied Physics 115, 063502 (2014).

 

*C. Robert, M. O. Nestoklon, K. Pereira Da Silva, L. Pedesseau, C. Cornet, M. I. Alonso, A. R. Goni, P. Turban,  J. M. Jancu, J. Even and O. Durand. strain induced fundamental optical transition in (In,Ga)As/GaP QDs ground state ”, Applied Physics Letters 104 011908 (2014).

 

*S. Almosni, C. Robert, T. Nguyen Thanh, C. Cornet, A. Létoublon, T. Quinci, C. Levallois, M. Perrin, J. Kuyyalil, L. Pedesseau, A. Balocchi, P. Barate, J. Even, J. M. Jancu, N. Bertru, X. Marie, O. Durand, and A. Le Corre, “Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells”, Journal of Applied Physics 113, 123509 (2013).

 

*T. Quinci, J. Kuyyalil, T.Nguyen Thanh, Y.Ping Wang, S. Almosni, A. Létoublon, T. Rohel, K. Tavernier, N. Chevalier, O. Dehaese, N. Boudet, J.F. Bérar, S. Loualiche, J. Even, N. Bertru, A. Le Corre, O. Durand, C. Cornet “Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster”, Journal of Crystal Growth 380, 157 (2013).

 

*J. Kuyyalil, T. Nguyen Thanh, T. Quinci, S.Almosni, A. Létoublon, T. Rohel, N. Bertru, A. Le Corre, O. Durand, C. Cornet, “Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN”,  Journal of Crystal Growth 377, 17 (2013).

 

*T. Nguyen Thanh, C. Robert, E. Giudicelli, A. Létoublon, C. Cornet, A. Ponchet, T. Rohel, A. Balocchi, J.S. Micha, M. Perrin, S. Loualiche, X. Marie N. Bertru, O. Durand and A. Le Corre “ Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates” Journal of Crystal Growth. 378, 25 (2013).

 

*T. Nguyen Thanh, C. Robert, A. Létoublon, C. Cornet, T. Quinci, E. Giudicelli, S. Almosni, N. Boudet, A. Ponchet, J. Kuyyalil, M. Danila, O. Durand, N. Bertru and A. Le Corre “ Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers” Thin Solid Films, 541, 36 (2013).

 

*A. Bondi, C. Cornet, S. Boyer, T. Nguyen Thanh, A. Letoublon, O. Durand, A. Moréac, A. Ponchet, A. le Corre and J. Even, “Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy” Thin Solid Films, 541, 72 (2013).

 

*C.Robert, T. Nguyen Thanh, M. Perrin, C. Cornet, A. Létoublon, J.M. Jancu,  J. Even, P. Turban, A. Balocchi, X. Marie, O. Durand and A. Le Corre “Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon application” Thin Solid Films, 541, 87 (2013).

 

*C. Cornet, T. Nguyen Thanh, T. Quinci, S. Almosni, T. Rohel, J. Kuyyalil, A Rambaud, A. Létoublon, N. Bertru, O. Durand and A. Le Corre “Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitrides alloys” Applied Physics Letters 101, 251906 (2012).

 

*C. Robert, C. Cornet, P. Turban, T. Nguyen Thanh, M.O. Nestoklon, J. Even, J.M. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, D. Lagarde, X. Marie, N. Bertru, O. Durand and A. Le Corre “Electronic, optical and structural properties of (In,Ga)As/GaP quantum dots” Physical Review B 86, 205316 (2012).

 

*T. Nguyen Thanh, C. Robert, W. Guo, A. Létoublon, C. Cornet, G. Elias, A. Ponchet, T. Rohel, N. Bertru, A. Balocchi, O. Durand, J.S. Micha, M. Perrin, S. Loualiche, X. Marie and A. Le Corre. Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon” Journal of Applied Physics 112, 053521 (2012).

 

*C. Robert, M. Perrin, C. Cornet, J. Even, and J.-M. Jancu “Atomistic calculations of GaAsP(N)/GaP(N) quantum wells on silicon substrate : band structure and optical gain” Applied Physics Letters 100, 111901 (2012).

 

*W. Guo, A. Bondi, C. Cornet, A. Létoublon, O. Durand, T. Rohel, S. Boyer-Richard, N. Bertru, S. Loualiche, J. Even, and A. Le Corre. “Thermodynamic evolution of anti-phase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering” Applied Surface Science 258, 2808 (2012).

 

* T. Nguyen Thanh, C. Robert, C. Cornet, M. Perrin, J.M. Jancu, N. Bertru, J. Even, N. Chevalier, H. Folliot, O. Durand and A. Le Corre, “Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots” Applied Physics Letters 99, 143123 (2011).

 

*C. Robert, A. Bondi, T. Nguyen Thanh, J. Even, C. Cornet, O. Durand, J.M. Jancu, W. Guo, H. Folliot, J. P. Burin, S. Boyer, M. Perrin, N. Chevalier, O. Dehaese, T. Rohel, K. Tavernier, S. Loualiche, A. Le Corre  Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes : effect of nitrogen incorporation” Applied Physics Letters 98, 251110 (2011).

 

*A. Létoublon,W. Guo, C. Cornet, A. Boulle, M. Véron, A. Bondi, O. Durand, T. Rohel, O. Dehaese, N. Chevalier, N. Bertru, A. Le Corre “X-ray study of antiphase domains and their stability in MBE grown GaP on Si” Journal of crystal growth 323, 409 (2011)

 

*A. Shuaib, C. Levallois, J. P. Gauthier, C. Paranthoen, O. Durand, C. Cornet, N. Chevalier and A. Le Corre. “Sputtered hydrogenated amorphous silicon thin film for Distributed Bragg Reflectors and long wavelength vertical cavity surface emitting lasers applications” Thin solid fims 519, 6178 (2011).

 

*J. Even, F. Doré, C. Cornet, and L. Pedesseau “Semianalytical model for simulation of electronic properties of narrow-gap strained semiconductor quantum nanostructures” Physical Review B 77, 085305 (2008).


*L. Pedesseau, J. Even, A. Bondi, W. Guo, S. Richard, H. Folliot, C. Labbe, C. Cornet, O. Dehaese, A. Le Corre, O. Durand and S. Loualiche. “Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD” Journal of Physics D: Applied Physics 41, 165505 (2008).

 

*J. Even, F. Dore, C. Cornet, L.Pedesseau, A. Schliwa and D. Bimberg "Semianalytical evaluation of linear and nonlinear piezoelectric potentials for quantum nanostructures with axial symmetry" Applied Physics Letters, 91, 12, 122112-3 (2007).


*J. Even, C. Cornet and F. Doré "Anisotropic and inhomogeneous Coulomb screening in the Thomas-Fermi approximation: Application to quantum dot-wetting layer system and Auger relaxation" Physica Status Solidi (b), 244, 9, 3105-14 (2007).

 

*K. Veselinov, F. Grillot, C. Cornet, J. Even, A. Bekiarski, M. Gioannini and S. Loualiche. "Analysis of the Double Laser Emission Occurring in 1.55 μm InAs/InP (113)B Quantum-Dot Lasers" IEEE Journal of Quantum Electronics, 43, 9, 810-16 (2007).

 

*C. Cornet “propriétés électroniques, optiques et dynamiques de boites quantiques auto-organisées et couplées sur substrat InP” PhD Thesis of INSA Rennes, 27th june (2006).

 

*C. Cornet, A. Schliwa, J. Even, F. Dore, C. Celebi, A. Letoublon, E. Macé, C. Paranthoen, A. Simon, P. M. Koenraad, N. Bertru, D. Bimberg and S. Loualiche "Electronic and optical properties of InAs/InP quantum dots on InP(100) and InP(311)B substrates: Theory and experiment" Physical Review  B 74, 035312 (2006).

 

*C. Cornet, C. Labbé, H. Folliot, P. Caroff, C. Levallois, O. Dehaese, J. Even, A. Le Corre and S. Loualiche "Time-resolved pump probe of 1.55  µm InAs/InP quantum dots under high resonant excitation " Applied Physics Letters, 88, 171502 (2006).

 

*C. Cornet, M. Hayne, P. Caroff , C. Levallois, L. Joulaud, E. Homeyer, C. Paranthoen, J. Even, C. Labbé, H. Folliot, V. V. Moshchalkov and S. Loualiche "Increase of charge carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots " Physical Review  B 74, 245315-20 (2006).

 

*J. Even, C. Cornet and S. Loualiche "A theoretical model for quantum nanostructures electronic wave functions, magnetic field effects" Physica E: Low-dimensional Systems and Nanostructures, 28, 4, 514-518 (2005).

 

*C. Cornet, C. Platz, P. Caroff, J. Even, C. Labbé, H. Folliot, A. Le-Corre and S. Loualiche "Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots" Physical Review B  72, 3, 35342 (2005).

 

*C. Cornet, C. Levallois, P. Caroff, H. Folliot, C. Labbé, J. Even, A. Le-Corre, S. Loualiche, M. Hayne and V. V. Moshchalkov "Impact of the capping layers on lateral confinement in InAs/InP quantum dots for 1.55 µm laser applications studied by magneto-photoluminescence" Applied Physics Letters, 87, 23, 233111 (2005). 

 

*C. Cornet, J. Even and S. Loualiche "Exciton and biexciton binding and vertical Stark effect in a model lens-shaped quantum box: Application to InAs/InP quantum dots" Physics Letters A, 344, 6, 457-462 (2005).

 

*C. Cornet, F. Dore, A. Ballestar, J. Even, N. Bertru, A. Le-Corre and S. Loualiche "InAsSb/InP quantum dots for midwave infrared emitters: a theoretical study" Journal of Applied Physics, 98, 12, 126105-1-3 (2005).

 

*C. Cornet, C. Labbé, H. Folliot, N. Bertru, O. Dehaese, J. Even, A. Le-Corre, C. Paranthoen, C. Platz and S. Loualiche "Quantitative investigations of optical absorption in InAs/InP (311)B quantum dots emitting at 1.55 µm wavelength" Applied Physics Letters, 85, 23, 5685-7 (2004).

 

Proceedings:

 

* T. Nguyen Thanh, J. Stodolna, Y. Ping Wang, A. Létoublon, S. Almosni, T. Rohel, A. Ponchet, N. Boudet, J.F. Bérar, A. Le Corre, N. Bertru, C. Cornet, and O. Durand. “Temperature dependance of microtwin generation at the GaP/Si heterointerface”, Thin Solid Films (submitted) (2015).

 

*M. Da Silva, S. Almosni, C. Cornet, A. Létoublon, C. Levallois, P. Râle, L. Lombez, J.-F. Guillemoles, O. Durand. « GaAsPN-based p-i-n solar cells MBE-grown on GaP substrates : toward the III-V/Si tandem solar cell”, Proc. Spie 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 93580H (April 16, 2015); doi:10.1117/12.2081376.

 

*C. Robert, C. Cornet, T. Nguyen Thanh, M. Nestoklon, K. Pereira Da Silva, I. Alonso, A. Goni, S. Tricot, P. Turban, M. Perrin, H. Folliot, T. Rohel, L. Pedesseau, J.-M. Jancu, J. Even, S. Mauger, P. Koenraad, A. Balocchi, Barate, X. Marie, N. Bertru, A. Le Corre, O. Durand. “Composition dependent nature of the fundamental optical

transition in (In,Ga)As/GaP quantum dots, IEEE Proceedings of IPRM 2014, Montpellier, France (2014). DOI:10.1109/ICIPRM.2014.6880555.

 

*J.-P. Gauthier, C. Robert, S. Almosni, C. Cornet, Y. Léger, M. Perrin, J.-P. Burin, A. Létoublon, J. Even, H. Carrère, A. Balocchi, X. Marie, and O.Durand. “Electrical injection in GaP-based laser waveguides and active areas, IEEE Proceedings of IPRM 2014, Montpellier, France (2014). DOI:10.1109/ICIPRM.2014.6880545.

 

*C. Robert, C. Cornet, K. Pereira da Silva, P. Turban, S. Mauger, T. Nguyen Thanh, J. Even, J.M. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, P. Barate, X. Marie, P.M. Koenraad, M.I. Alonso, A.R. Goñi, N. Bertru, O. Durand and A. Le Corre. Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation ” IEEE Proceedings of IPRM 2013, Kobe, Japan (2013).

 

*O. Durand, C. Robert, T. Nguyen Thanh, S. Almosni, T. Quinci, J. Kuyyalil, C. Cornet, A. Létoublon, C. Levallois, J.-M. Jancu, J. Even, L. Pédesseau, M. Perrin, N. Bertru, A. Sakri, N. Boudet, A. Ponchet, P. Rale, L. Lombez, J.-F. Guillemoles, X. Marie, A. Balocchi, P. Turban, S. Tricot, M. Modreanu, S. Loualiche, A. Le Corre  Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications” Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 863126 (2013).

 

*A. Sakri, C. Robert, L. Pedesseau, C. Cornet, O. Durand, J. Even and J.-M. Jancu “ Intrinsic optical confinement for ultrathin InAsN quantum well superlattices” AIP Conference Proceedings of the ICPS (2012).

 

* T. Nguyen Thanh, C. Robert, C. Cornet, W. Guo, A. Letoublon, M. Perrin, N. Bertru, J. Even, N. Chevalier, H. Folliot, S. Loualiche, A. Ponchet, G. Elias, J. S. Micha, O. Durand, and A. Le Corre, “Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si” Proceedings of SPIE, 8268, 82681H–14 (2012).

 

*C. Robert, T. Nguyen Thanh, C. Cornet, P. Turban, M. Perrin, A. Balocchi, H. Folliot, N. Bertru, L. Pedesseau, M.O. Nestoklon, J. Even, J.-M. Jancu, S. Tricot, O. Durand, X. Marie and A. Le Corre. “Theoretical and experimental studies of (In,Ga)As/GaP quantum dots” Nanoscale Research Letters 7, 643 (2012).

 

*W. Guo, T. Nguyen Thanh, G. Elias, A. Létoublon, C. Cornet, A. Ponchet, A. Bondi, T. Rohel, N. Bertru, C. Robert, O. Durand, J.S. Micha and A. Le Corre, Structural characterisation of GaP/Si nanolayers” Indium Phosphide and Related Materials Proceedings (IEEE), (2011).

 

*C. Cornet, C. Robert, T. Nguyen Thanh, W. Guo, A. Bondi, G. Elias, A. Létoublon, S. Richard, J.-P Burin, M. Perrin, J.-M. Jancu, J. Even, S. Loualiche, H. Folliot, N. Bertru, A. Ponchet, O. Durand and A. Le Corre, Carrier injection in GaAsPN/GaPN Quantum Wells on Silicon” Indium Phosphide and Related Materials Proceedings (IEEE), (2011).

 

*O. Durand, A. Létoublon, D. J. Rogers, F. Hosseini Teherani, C. Cornet and A. Le Corre, Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-merit” Proceedings of the SPIE 7940, 79400L (2011) doi:10.1117/12.877661

 

*J. Even, F. Grillot, K. Veselinov, R. Piron, C. Cornet, F. Doré, L. Pedesseau, A. Le Corre, S. Loualiche, P. Miska, X. Marie, M. Gioannini, I. Montrosset “Analysis of carriers dynamics and laser emission in 1.55 μm InAs/InP(113)B quantum dot lasers” SPIE Proceedings Series (2010) 7720.

 

*A. Bondi, W. Guo, L. Pedesseau, S. Boyer-Richard, H. Folliot, N. Chevalier, C. Cornet, A. Létoublon, O. Durand, C. Labbé, M. Gicquel, A. Le Corre, J. Even, S. Loualiche and A. Moreac “Light emitting diodes on silicon substrates: preliminary results” Physica Status Solidi (c) 6, 2212 (2009).

 

*W. Guo, A. Bondi, C. Cornet, H. Folliot, A. Létoublon, S. Boyer-Richard, N. Chevalier, M. Gicquel, B. Alsahwa, A. Le Corre, J. Even, O. Durand and S. Loualiche. First step to Si photonics:  synthesis of quantum dots light-emitter on GaP substrate by MBE” Physica Status Solidi (c) 6, 2207 (2009).


*S. Richard, J.-P. Burin, C. Labbé, C. Cornet, H. Folliot, C. Paranthoën, A. Nakkar, T. Rohel, F. Thoumyre, K. Tavernier and S. Loualiche. "Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots" Indium Phosphide and Related Materials Proceedings (IEEE), (2008).


*L. Pedesseau, C. Cornet, F. Doré, J. Even, A. Schliwa and D. Bimberg "From k.p to atomic calculations applied to semiconductor heterostructures" Journal of Physics: Conference Series, 107, 012009 (2008).

 

*L. Pedesseau, J. Even, F. Doré and C. Cornet "Atomic Calculations Applied to Semiconductor Hetero Structures" Computation in Modern Science and Engineering, 963, 2, 1331-4 (2007).

 

*C. Labbé, C. Cornet, H. Folliot, P. Caroff , C. Levallois, T. Rohel, J. Even, M. Gicquel-Guezo and S. Loualiche "Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitation" Physica status solidi (c), 4, 2, 454-7 (2007)

 

*C. Labbé, C. Cornet, H. Folliot, P. Caroff, C. Levallois, O. Dehaese, J. Even, A. Le Corre and S. Loualiche. "Carrier relaxation dynamics of 1.55 µm InAs/InP quantum dots under high resonant excitation" AIP Conference Proceedings, 893, 991 (2007).


*F. Doré, J. Even, C. Cornet, A. Schliwa, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre and S. Loualiche "A theoretical and experimental study of lambda>2 µm luminescence of quantum dots on InP  substrate" AIP Conference Proceedings, 893, 889 (2007).


*C. Cornet, M. Hayne, A. Schliwa, F. Doré, C. Labbé, H. Folliot, J. Even, D. Bimberg, V. V. Moshchalkov and S. Loualiche "Theory and experiment of InAs/InP quantum dots : from calculations to laser emission" AIP Conference Proceedings, 893, 779 (2007).


*C. Cornet, M. Hayne, A. Schliwa, F. Dore, J. Even, D. Bimberg, V. V. Moshchalkov and S. Loualiche "InAs/InP quantum dots (QD) : from fundamental understanding to coupled QD 1.55 µm laser applications" Physica Status Solidi (c), 4, 458 (2007).

 

*C. Cornet, M. Hayne, C. Levallois, P. Caroff, E. Homeyer, J. Even, C. Paranthoen, H. Folliot, C. Labbé and S. Loualiche "Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement" Journal de Physique IV: The European Physical Journal (EPJ), 135, 141-2 (2006).

 

*F. Doré, A. Ballestar, C. Cornet, N. Bertru, O. Dehaese, I. Alghoraibi, R. Piron, J. Even and S. Loualiche "Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5 µm)" Journal de Physique IV: The European Physical Journal (EPJ), 135, 283-4 (2006).

 

*F. Doré, C. Cornet, A. Schliwa, A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre and S. Loualiche "InAsSb/InGaAs  quantum  nanostructures on InP(100) substrate: observation of 2.35 µm photoluminescence " Physica status solidi(c) 3, 524 (2006).


*F. Doré, C. Cornet, P. Caroff , A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. LeCorre and S. Loualiche "InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 µm photoluminescence" Physica Status Solidi(c), 3, 11, 3920-3 (2006).


*C. Cornet, A. Schliwa, M. Hayne, N. Chauvin, F. Doré, J. Even, V. V. Moshchalkov, D. Bimberg, G. Bremond, C. B.-Chevalier, M. Gendry and S. Loualiche "InAs/InP quantum dots: from single to coupled dots applications" Physica Status Solidi (c), 3, 11, 4039-42 (2006)

 

*C. Cornet, C. Platz, J. Even, P. Miska, C. Labbé, H. Folliot and S. Loualiche "Theoretical description of the electronic coupling  between a wetting layer and a QD superlattice plane" AIP Conference Proceedings, 772, 787 (2005).

b) –Invited talks

 

 

*C. Cornet, O. Skibitzki, M. Bahri, Y. Ping Wang, P. Guillemé, M. Da Silva, R. Tremblay, P. Râle, S. Charbonnier, P. Turban, L. Largeau, G. Patriarche, L. Lombez, Y. Dumeige, Y. Yamamoto, P. Zaumseil, M. A. Schubert, T. Rohel, C. Levallois, A. Letoublon, J.-F. Guillemoles, T. Schroeder, Y. Léger and O. Durand. “(In)GaP integration on Si for photonics and energy”, Invited talk at the EMRS Fall meeting, Warsaw, Poland, 15-18 September 2015.

 

*O. Durand, S. Almosni, M. Da Silva, C. Cornet, A. Létoublon, C. Levallois, A. Rolland, J. Even, L. Pedesseau, S. Loualiche, P. Rale, L. Lombez, J.-F. Guillemoles, F. Mandorlo, M. Lemiti. “Toward the III-V/Si high efficiency tandem solar cell”, Invited talk at the “International workshop on advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications, Bucharest, Romania, 16-18 September 2015.

 

*O. Durand, S. Almosni, Y. Ping Wang, C. Cornet, A. Létoublon, C. Levallois, A. Rolland, J. Even, N. Bertru, A. Le Corre, P. Râle, L. Lombez, J.-F. Guillemoles, A. Ponchet. “Monolithic integration of GaAsPN dilute-nitride

compounds on silicon substrates: toward the III-V/Si tandem solar cell”, Invited talk at the « SPIE Photonics West conference », San Fransisco, USA, 7-12 February 2015.

 

*C. Cornet, P. Guillemé, J. P. Gauthier, C. Robert, J. Stodolna, Y. Ping Wang, A. Létoublon, A. Ponchet, M. Bahri, G. Patriarche, L. Largeau, C. Magen, Y. Dumeige, P. Feron, C. Levallois, Y. Léger and O. Durand. “Intégration pseudomorphique dans la filière GaP/Si pour les applications lasers sur puce”, Invited talk at the « journées thématiques du GDR  Ondes GT2 », Orsay, France, 14 November 2014.

 

*O.Durand, Y. Ping Wang, S. Almosni, M. Bahri, J. Stodolna, A. Létoublon, N. Bertru, A. Le Corre, A. Ponchet, G. Patriarche, L. Largeau, C. Magen, J.-P. Gauthier, C. Robert, C. Levallois, J. Even, A. Rolland, C. Cornet, P. Rale, L. Lombez, J.-F. Guillemoles. “Thorough structural and optical analyses of GaP -based heterostructures monolithically grown on silicon substrates for photonics on Si applications: towards the laser on silicon and high efficiency photovoltaics on silicon, Invited talk at the “International workshop on advanced optical and X-ray characterization techniques of multifunctional materials for information and communication technologies, health and renewable energy applications, Bucharest, Romania, 10-12 September 2014.

 

*A. R. Goñi, C. Robert, K. Pereira da Silva, M. O. Nestoklon, L. Pedesseau, C.Cornet, M. I. Alonso, P. Turban, J. M. Jancu, J. Even and O.Durand “Using high pressure to unravel the nature of optical transitions in (In,Ga)As/GaP quantum dots, Invited talk at “16th High Pressure in Semiconductor Physics conference”- HPSP-16, Mexico City, Mexico, 06-08 August 2014.

 

*O. Durand, T. Nguyen Thanh, Y. Ping Wang, A. Létoublon, C. Cornet and A. Le Corre “Advanced X-ray analyses on epitaxially-grown thin films for optoelectronic applications, Invited talk at “15th International Conference of Physical Chemistry” - ROMPHYSCHEM–15, Bucharest, Romania, 11-13 September 2013.

 

*C. Cornet, P. Turban, C. Robert, S. Tricot, M. Perrin, H. Folliot, J. Even, J.-M. Jancu, N. Bertru, A. Le Corre and O. Durand “Boîtes quantiques semi-conductrices : relation entre morphologie, structure électronique et propriétés optiques”, Invited talk at “Journées Nanosciences et Nanotechnologies du Nord Ouest Rennes, France, 14-15 November 2013.

 

*C. Cornet, T. Rohel, O. Dehaese, N. Chevalier, A. Létoublon, N. Bertru, O. Durand, A. Le Corre “Développement d'un cluster de croissance UHVCVD-MBE pour l'intégration pseudomorphique III-V/Si”, Invited talk at “Colloque annuel du GDR CNRS Pulse Aix-en-Provence, France, 03-05 July 2013.

 

*C. Cornet, C. Robert, T. Nguyen Thanh, Y. Ping Wang, S. Almosni, M. Perrin, A. Létoublon, J. Even, P. Turban, A. Balocchi, X. Marie, N. Bertru, O. Durand, A. Le Corre “Intégration optique par croissance directe de nanostructures III-V sur silicium”, Invited talk at 14èmes Journées Nano, Micro et Optoélectronique (JNMO), Evian, France, 21-23 May 2013.

 

*C. Robert, M. Nestoklon, C. Cornet, O. Durand, J. Even and J.M. Jancu,

“Tight binding simulations in III-V structures on Si”,

Invited talk at International Workshop “Silicon & Photonics”, Rennes, France, June 11-12, (2013).

 

*A.Ponchet, J. Stodolna, C. Cornet, A. Letoublon, T. Nguyen Thanh, O. Durand,

“Origin and observations of extended defects in III-V epilayers on Si”,

Invited talk at International Workshop “Silicon & Photonics”, Rennes, France, June 11-12, (2013).

 

*O.Durand, C. Robert, T. Nguyen Thanh, S. Almosni, T. Quinci, J. Kuyyalil, C. Cornet, A. Létoublon, C. Levallois, J.-M. Jancu, J. Even, L. Pédesseau, M. Perrin, N.Bertru, A. Sakri, N. Boudet, A. Ponchet, P. Rale, L. Lombez, J.-F. Guillemoles, X. Marie, A. Balocchi, P. Turban, S. Tricot, M. Modreanu, S. Loualiche, A. Le Corre,

“Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications”

Invited talk at “Photonics west 2013” San Francisco, USA, February 2-4 (2013).

 

*C. Cornet, C. Robert, S. Almosni, T. Nguyen Thanh, T. Quinci, Y. Ping Wang, A. Létoublon, M. Perrin, J. Even, N. Bertru, A. Balocchi, P. Barate, X. Marie, O. Durand and A. Le Corre,

“GaAsPN compounds for Si photonics”,

Invited talk at International Workshop “Silicon & Photonics”, Rennes, France, June 11-12, (2013).

 

*O. Durand, S. Almosni, C. Robert, T. Nguyen Thanh, C. Cornet, A. Létoublon, C. Levallois, L. Pedesseau, J. Even, J.-M. Jancu, N. Bertru, A. Le Corre, F. Mandorlo, M. Lemiti, P. Rale, L Lombez, J.-F. Guillemoles, E. Tea, S. Laribi, J. Stodolna, A. Ponchet, P. Bellavoine, P. Laferriere and N. Boudet

“Monolithic growth of III-V-N diluted nitride devices on Si substrate for solar cells”

Invited talk at JNPV 2012, Chantilly, France (2012).

 

*O. Durand, A. Letoublon, D. J. Rogers, F. Hosseini Teherani, C. Cornet and A. Le Corre 

“Interpretation of the two-components observed in high resolution X-ray diffraction w scan peaks from mosaic thin films: case of both PLD-grown ZnO on c-sapphire substrate and MBE-grown GaP on silicon substrate”

Invited talk 3rd International Workshop "Current trends and advanced ellipsometric and XRD techniques for the characterization of nanostructured materials", September 15 - 16th 2011, "Ilie Murgulescu" Institute of Physical Chemistry, Romanian Academy, Bucharest, Romania.

 

*O. Durand, A. Létoublon, D. J. Rogers, F. Hosseini Teherani, C. Cornet and A. Le Corre, “Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-merit”

Invited talk at SPIE Photonics West, California, San Francisco, January 2011.

 

*C. Cornet, L. Pédesseau, J. Even, F. Doré, A. Schliwa and D. Bimberg,

“Quantum dots simulation: from first principle calculations to 8*8 band k.p description”,

Invited talk at Physics based mathematical models of low-dimensional semiconductor nanostructures: analysis and computation , Banff, Canada 18-23 nov. (2007).

 

 

c) –Communications with international audience

 

*S. Almosni, C. Cornet,  A. Létoublon, N. Bertru, A. Le Corre, C. Levallois, J. Even, A. Rolland,  P. Râle, L. Lombez, J.-F. Guillemoles and O. Durand  Lattice-matched GaAsPN/GaP single junction solar cell for high-efficiency tandem solar cells on silicon Poster at Euro-MBE 2015, Canazei, Italy 15-18 March 2015.

 

*J.-P. Gauthier, C. Robert, S. Almosni, C. Cornet, Y. Léger, M. Perrin, J.-P. Burin, A. Létoublon, J. Even, R. Tremblay, A. Beck, H. Carrère, A. Balocchi, X. Marie, and O. Durand  “Carrier injection in GaP-based laser waveguides and dilute nitrides gain medium Poster at Euro-MBE 2015, Canazei, Italy 15-18 March 2015.

 

*O. Durand, S. Almosni, M. Da Silva, P. Rale, A. Le Corre, C. Cornet, C. Levallois, A. Rolland, J. Even, L. Lombez and J.-F. Guillemoles. “Towards the III-V/Si CPV on Si substrates Poster at EMRS 2015, Lille, France, 11-15 May 2015.

 

*Y. Ping Wang, A. Létoublon, T. Nguyen Thanh, M.Bahri, L.Largeau, G. Patriarche, A. Ponchet, C. Cornet, L. Pédesseau, J. Even, N. Bertru, S. Loualiche, A. Le Corre, O.Durand “Quantitative evaluation of microtwins and antiphase defects towards a GaP/Si platform for monolithic integrated photonics Talk at EMRS 2015, Lille, France, 11-15 May 2015.

 

*P. Guillemé, Y. Dumeige, J. Le Pouliquen, D. Gachet, T. Rohel, C. Cornet, P. Féron, M. Bahri, L. Largeau, G. Patriarche, O. Durand, Y. Léger “MBE-grown GaP/Si micro-disks Talk at Euro-MBE 2015, Canazei, Italy 15-18 March 2015.

 

*C. Cornet, J.-P. Gauthier, C. Robert, S. Almosni, Y. Léger, M. Perrin, A. Balocchi, H. Carrere, X. Marie, M. Nestoklon, K. Pereira da Silva, L. Pedesseau, M.I. Alonso, A. R. Goñi, P. Turban, J.M. Jancu, J. Even, and O. Durand “Structural, electronic properties and carrier dynamics in InGaAs(N)/GaP quantum dots Talk at Euro-MBE 2015, Canazei, Italy 15-18 March 2015.

 

*K. Żelazna, M. Gladysiewicz, R. Kudrawiec, W. Walukiewicz, S. Almosni, C. Cornet, and O. Durand « Electronic band structure and optical properties of GaNxPyAs1-x-y with y≥0.6 studied by electro-modulation spectroscopy and photoluminescence”, Talk at “Compound semiconductor week Santa Barbara, USA, 28 June-2 July 2015.

 

*P. Guillemé, M. Bahri, J. Stervinou, D. Gachet, T. Rohel, A. Letoublon, C. Cornet, Y. Dumeige, P. Féron, L.Largeau, G. Patriarche, O. Durand, Y. Léger « Investigation of the optical properties of GaP microdisks for optical functions integrated on silicon”, Talk at “Compound semiconductor week Santa Barbara, USA, 28 June-2 July 2015.

 

*R. Tremblay, Y. Huang, J.P. Gauthier, R. Piron, A. Beck, C. Levallois, C. Paranthoën, J. P Burin, L. Pedesseau, J. Even, T. Rohel, K. Tavernier, J. Stervinou, A. Balocchi, H. Carrère, X. Marie, O. Durand, Y. Léger and C. Cornet. « Electroluminescence of InGaAs/GaP quantum dots and band engineering of AlGaP/GaP laser injection layers”, Talk at “Compound semiconductor week Santa Barbara, USA, 28 June-2 July 2015.

 

*Y. Ping Wang, A. Létoublon, T. Nguyen Thanh, J. Stodolna, N. Bertru, A. Le Corre, A. Ponchet, C. Magen, J.S. Micha, N. Boudet, J. Even, C. Cornet, O. Durand. “Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for III-V photonics platform on silicon, Talk at the “12th Biennal Conference on High-Resolution X-Ray Diffraction and Imaging”, Villard de Lans, France, 14-19 September 2014.

 

*S. Almosni, C. Robert, C. Cornet, T. Nguyen Thanh, Y. Ping Wang, P. Rale, L. Lombez, J.-F. Guillemoles,

A. Létoublon, C. Levallois, N. Bertru, A. Le Corre and O. Durand. “Development of GaAsPN alloy for its integration in III-V/Si tandem solar cell, Poster at the “Workshop on above 25% efficiency solar cells via low cost approaches”, Palaiseau, France, 10 July 2014.

 

*O. Durand, S. Almosni, P. Râle, J. Rodière, Y. PingWang, A. Létoublon, H. Folliot, A. Le Corre, C. Cornet, A. Ponchet, L. Lombez, J.-F. Guillemoles. “Advanced concepts of III-V-based Solar Cells heterostructures: towards III-V/Si CPV on Si substrates and hot-carrier solar cells on InP substrates, Talk at the “European Materials Research Society 2014 Spring Meeting” E-MRS 2014, Lille, France, 26-30 May 2014.

 

*Y. Ping Wang, J. Stodolna, T. Nguyen Thanh, A. Létoublon, J. Kuyyalil, N. Bertru, A. Le Corre, A. Ponchet, C. Magen, J. Even, C. Cornet, O.Durand. “Low cristalline defect density in GaP/Si nanolayers, Talk at the “European Materials Research Society 2014 Spring Meeting” E-MRS 2014, Lille, France, 26-30 May 2014.

 

*S. Almosni, P. Râle, C. Cornet, C. Levallois, L. Lombez, K. Tavernier, T. Rohel, N. Bertru, J.-F. Guillemoles

and O. Durand. “Annealing effect on electrical properties of GaAsPN solar cells, Poster at “29th European PV Solar Energy Conference and Exhibition Amsterdam, The Netherlands, 22-26 September 2014.

 

*C. Robert, C. Cornet, T. Nguyen Thanh, M. Nestoklon, K. Pereira Da Silva, I. Alonso, A. Goni, S. Tricot, P. Turban, M. Perrin, H. Folliot, T. Rohel, L. Pedesseau, J.-M. Jancu, J. Even, S. Mauger, P. Koenraad, A. Balocchi, Barate, X. Marie, N. Bertru, A. Le Corre, O. Durand. “Composition dependent nature of the fundamental optical

transition in (In,Ga)As/GaP quantum dots, Talk at “Compound semiconductor week Montpellier, France, 11-15 May 2014.

 

*S. Almosni, P. Râle, C. Cornet, C. Levallois, L. Lombez, K. Tavernier, T. Rohel, N. Bertru, J.-F. Guillemoles and O. Durand. “Impact of annealing on the performances of GaAsPN-based solar cells, Poster at “Compound semiconductor week Montpellier, France, 11-15 May 2014.

 

*H. Carrère, A. Balocchi, T. Amand, C. Robert, M. Perrin, C. Cornet, J. Even, J.-M Jancu, O. Durand and X. Marie. “GaAsPN alloys for optoelectronics on Silicon, Poster at “Compound semiconductor week Montpellier, France, 11-15 May 2014.

 

*J.-P. Gauthier, C. Robert, S. Almosni, C. Cornet, Y. Léger, M. Perrin, J.-P. Burin, A. Létoublon, J. Even, H. Carrère, A. Balocchi, X. Marie, and O.Durand. “Electrical injection in GaP-based laser waveguides and active areas, Poster at “Compound semiconductor week Montpellier, France, 11-15 May 2014.

 

*Y. Ping Wang, J. Stodolna, T. Nguyen Thanh, A. Létoublon, J. Kuyyalil, N. Bertru, A. Le Corre, A. Ponchet, C. Magen, C. Cornet, O.Durand “Abrupt heterointerface and low defect density in GaP/Si nanolayers, Talk at “Compound semiconductor week Montpellier, France, 11-15 May 2014.

 

*C. Robert, M. Perrin, L. Pedesseau, Y. Léger, P. Barate, A. Balocchi, C. Cornet, X. Marie, J.-M. Jancu, J. Even, O. Durand  “Carrier capture and relaxation in GaAsPN/GaP quantum wells, Poster at “32nd International Conference  on the Physics of Semiconductors Austin, USA, 10-15 August 2014.

 

*C. Robert, K. Pereira da Silva, A. R. Goñi, M.O. Nestoklon, L. Pedesseau, C. Cornet, M.I. Alonso, P. Turban, J.-M. Jancu, J. Even, and O. Durand “Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots, Poster at “32nd International Conference  on the Physics of Semiconductors Austin, USA, 10-15 August 2014.

 

*O. Durand, S. Almosni, C. Robert, T. Nguyen Thanh, Y. Ping Wang, C. Cornet, A.Létoublon, C. Levallois, L. Pedesseau, J. Even, J.-M. Jancu, N. Bertru, A. Le Corre, A. Bondi, P. Râle, L. Lombez, J.-F. Guillemoles, E. Tea, S. Laribi, J. Stodolna, A. Ponchet and N. Boudet “Monolithic integration of diluted-nitride III-V-N compounds on silicon substrates: toward the III-V/Si Concentrated Photovoltaics, Talk at “International Symposium on Inorganic and Environmental Materials Rennes, France, 27-30 October 2013.

 

*C. Robert, M. Perrin, C. Cornet, P. Barate, A. Balocchi, X. Marie, H. Folliot, O. Durand and J. Even “Carrier lifetime and relaxation dynamics in (In,Ga)As/GaP quantum dots, Poster at “International Symposium on Physics and Applications of Laser Dynamics IS-PALDParis, France, 29-31 October 2013.

 

*A. Rolland, L. Pedesseau, J. Even, S. Almosni, C. Robert, C. Cornet, J.M. Jancu, J. Benhlal, O. Durand, A. Le Corre, P. Râle, L. Lombez, J.-F. Guillemoles, E. Tea, S. Laribi. “Design of a lattice-matched III-V-N/Si photovoltaic tandem cell monolithically integrated on silicon substrate”, Talk at “NUmerical Simulation of Optolectronic Devices (NUSOD) Vancouver, Canada, 19-22 August (2013).

 

*S. Almosni, C. Cornet, T. Quinci, T. Nguyen Thanh, J. Kuyyalil, C. Paranthoen, P. Rale, L. Lombez, J.-F. Guillemoles, J. Stodolna, A. Ponchet, C. Robert, Y. Ping Wang, A. Létoublon, N. Boudet, C. Levallois, N. Bertru, O. Durand and A. Le Corre “UHVCVD-MBE growth cluster for III-N-V/Si solar cells”, Talk at “Compound semiconductors week, ISCS, 2013” Kobe, Japan 19-23 May 2013.

 

*C. Robert, C. Cornet, K. Pereira da Silva, P. Turban, S. Mauger, T. Nguyen Thanh, J. Even, J.M. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, P. Barate, X. Marie, P.M. Koenraad, M.I. Alonso, A.R. Goñi, N. Bertru, O. Durand and A. Le Corre “Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): effect of QD size, indium composition and nitrogen incorporation ”, Poster at “Compound semiconductors week, IPRM, 2013” Kobe, Japan, 19-23 May 2013.

 

*S. Almosni, C. Cornet, T. Quinci, T. Nguyen Thanh, J. Kuyyalil, P. Rale, L. Lombez, J.-F. Guillemoles, J. Stodolna, A. Ponchet, C. Robert, Y. Ping Wang, A. Létoublon, N. Boudet, C. Levallois, N. Bertru, O. Durand and A. Le Corre, “UHVCVD-MBE growth for tandem solar cells”, Poster at the “Photovoltaic technical conference – thin film & advanced silicon solutions 2013” Aix-en-Provence, France, May 22-23 (2013).

 

*C. Robert, C. Cornet, O. Durand, K. Pereira da Silva, P. Turban, S. Mauger, T. Nguyen Thanh, J. Even, J.M. Jancu, M. Perrin, H. Folliot, T. Rohel, A. Létoublon, S. Tricot, A. Balocchi, P. Barate, X. Marie, P.M. Koenraad, M.I. Alonso, A.R. Goñi, N. Bertru, A. Le Corre Γ-X competition for the optical transition of (In,Ga)As(N)/GaP quantum dots (QDs), Talk at the “European Materials Research Society meeting E-MRS 2013” Strasbourg, Mai 26th-June 1st (2013).

 

*E. Tea, C. Cornet, A. Létoublon, J. Vidal, L. Pedesseau, J. Even, J.-M.Jancu, O. Durand, S. Laribi, J.F. Guillemoles,“Ab Initio investigation of defect nucleation at III-V/Si heterointerface for tandem solar cells applications” Poster at the “European Materials Research Society meeting E-MRS 2013” Strasbourg, Mai 26th-June 1st (2013).

 

*P. Râle, S. Almosni, C. Cornet, L. Lombez, S. Laribi, O. Durand and J.F. Guillemoles “Toward a III-V/Si tandem solar cell: characterization and modeling” Poster at the “European Materials Research Society meeting E-MRS 2013” Strasbourg, Mai 26th-June 1st (2013).

 

*P. Râle, L. Lombez, S. Almosni, C. Cornet, O. Durand and J.-F. Guillemoles “Investigation of GaAsPN material towards III-V/Si solar cells”Poster at EUPVSEC 2013, Paris, France, 30 september-04 October 2013.

 

*C. Robert, C. Cornet, P. Turban, S. Mauger, T. Nguyen Thanh, J. Even, J.M. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, D. Lagarde, X. Marie, P. M. Koenraad, N. Bertru, O. Durand and A. Le Corre Γ-X competition in (In,Ga)As/GaP quantum dots (QDs) : effect of QD size and Indium composition Talk at Euro-MBE 2013, Levi, Finland 10-13 March 2013.

 

*C. Cornet, T. Nguyen Thanh, T. Quinci, S. Almosni, J. Kuyyalil, A. Létoublon, N. Bertru, O. Durand and A. Le Corre  “ Enhanced incorporation of nitrogen on atomic step edges adsorption sites in diluted nitrides alloys” Poster at Euro-MBE 2013, Levi, Finland 10-13 March 2013.

 

*Y. Zhao, N. Bertru, H. Folliot, C. Cornet, S. Mauger, P. Koenraad, C. Gatel, A. Ponchet “ Sb surface mediated growth of InAs on InP(100) and (311)B substrates” Poster at Euro-MBE 2013, Levi, Finland 10-13 March 2013.

 

*J. Kuyyalil, T. Nguyen Thanh, T. Quinci, C. Cornet, A. Létoublon, Y. Ping Wang, J. Stodolna, F. Demangeot, A. Ponchet, N. Bertru, O. Durand and A. Le Corre “Growth of GaP on biatomic Si steps using a UHVCVD-MBE cluster” Talk at Euro-MBE 2013, Levi, Finland 10-13 March 2013.

 

*J. Stodolna, F. Demangeot, A. Ponchet, T. Nguyen Thanh, A. Letoublon, C. Cornet, N. Boudet and O. Durand “ Crystalline defects in GaP layers grown on Si (001)” Poster at Euro-MBE 2013, Levi, Finland, 10-13 March 2013.

 

*C. Bougerol, J. Eymery, C. Cornet, A. Létoublon, C. Durand “ HR-TEM study of GaN-GaP type II interfaces” Talk at 18th Microscopy of Semiconducting Materials MSMXVIII, Oxford, UK 7-11 April (2013).

 

*T. Nguyen Thanh, C. Robert, C. Cornet, W. Guo, A. Letoublon, M. Perrin, N. Bertru, J. Even, J.M. Jancu, N. Chevalier, H. Folliot, S. Loualiche, O. Durand, A. Le Corre, A. Ponchet, G. Elias, J. S. Micha, N. Boudet, P. Turban, A. Balocchi, D. Lagarde and X. Marie “Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si” Talk at technical meeting of Sandie european network of excellence, Berlin, Germany (2012).

                                                                                                                     

*A. Bondi, C. Cornet, S. Boyer, T. Nguyen Thanh, A. Letoublon, O. Durand, A. Moréac, A. Ponchet, A. le Corre and J. Even. “Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy” Poster at the EMRS 2012, Strasbourg, France (2012).

 

*T. Nguyen Thanh, C. Robert, A. Létoublon, C. Cornet, T. Quinci, E. Giudicelli, S. Almosni, N. Boudet, A. Ponchet, J. Kuyyalil, M. Danila, O. Durand., N.Bertru and A.Le Corre.“Synchrotron X-ray diffraction complementary peak analysis for quantitative defect evaluation in GaP/Si nanolayers” Talk at EMRS 2012, Strasbourg, France (2012).

 

*S. Almosni, C. Robert, T. Quinci, T. Nguyen Thanh, C. Cornet, C. Levallois, A. Létoublon, J. Even, J.M. Jancu, N. Bertru, O. Durand and A. Le Corre “Evaluation of InGaP(N) and Ga(As)P(N) materials lattice-matched to Si for multi-junction solar cells” Poster at international MBE conference 2012, Nara, Japan (2012).

 

*C. Robert, C. Cornet, P. Turban, T. Nguyen Thanh, S. Tricot, T. Rohel, M. Perrin, J. Even, A.Balocchi, X. Marie, N. Bertru, O. Durand and A. Le Corre “Optical and structural properties of (In,Ga)As/GaP quantum dots : C2 to C2v symmetry transition during the ripening process” Poster at international MBE conference 2012, Nara, Japan (2012).

 

*T. Nguyen Thanh, C. Robert, E. Giudicelli, A. Létoublon, C. Cornet, A. Ponchet, T. Rohel, A.Balocchi, J.S. Micha, M. Perrin, S. Loualiche, X. Marie, N. Bertru, O. Durand and A. Le Corre “Structural and optical studies of GaP/Si induced defects in GaAsPN quantum wells grown on Si” Poster at international MBE conference 2012, Nara, Japan (2012).

 

*C. Robert, T. Nguyen Thanh, S. Almosni, T. Quinci, M. Perrin, C. Cornet, J. Even, J.M. Jancu, A. Létoublon, C. Levallois, O. Durand and A. Le Corre “Dilute nitride GaNAsP for photonic applications on silicon” Poster ISTN2012 : International Symposium on nitrides, Saint Malo, France,  June 3th-6th 2012

 

*C. Robert, T. Nguyen Thanh, M. Perrin, C. Cornet, A. Létoublon, J. M. Jancu, J. Even, N. Bertru, P. Turban, A. Balocchi, X. Marie, O. Durand and A. Le Corre. “Development of laser structure for the pseudomorphic integration on silicon”. Poster at EMRS 2012, Strasbourg, France, (2012).

 

*S. Almosni, C. Robert, T. Nguyen Thanh, C. Cornet, A. Létoublon, C. Levallois, T. Quinci, J. Even, J.M. Jancu, O. Durand and A. Le Corre. InGaPN  and GaAsPN layers for tandem solar cells on silicon”. Poster at EMRS 2012, Strasbourg, France, (2012).

 

*S. Almosni, C. Robert, C. Cornet, C. Levallois, T. Quinci, A. Létoublon, J. Even, J.M. Jancu, O. Durand and A. Le Corre. “Potentiality of GaAsPN and InGaPN for photovoltaic applications”. Poster at PVTC 2012, Thin films and advanced silicon solutions, Aix-en-provence, France, (2012).

 

*C. Robert , T. Nguyen Thanh, C. Cornet, P. Turban, M. Perrin, A. Balocchi, N. Bertru, J. Even, J.M. Jancu, S. Tricot, O. Durand, X. Marie and A. Le Corre. “Theoretical and experimental study of (In,Ga)As/GaP quantum dots”. Talk at ICSNN, Dresden, Germany, (2012).

 

*C. Cornet, P. Turban, C. Robert, T. Nguyen Thanh, S. Tricot, N. Bertru, O. Durand and A. Le Corre. “Unusual C2 symmetry properties of (In,Ga)As/GaP quantum dots morphology”. Talk at ICSNN, Dresden, Germany, (2012).

 

*C. Robert, M. Perrin, C. Cornet, J. Even, O. Durand and J. M. Jancu. “Tight-binding calculations of Ga(NAsP)/GaP(N) quantum wells for photonic integration on silicon”. Poster at ICSNN, Dresden, Germany, (2012).

 

*A. Sakri, C. Robert, L. Pedesseau, C. Cornet, J. Even and J. M. Jancu. “Intrinsic optical confinement for ultrathin InAs/GaAs/GaP quantum well superlattices”. Poster at ICSNN, Dresden, Germany, (2012).

 

*C. Robert, M. Perrin, C. Cornet, J. Even, O. Durand and J. M. Jancu. atomistic modelling of GaNAsP/GaPN type I quantum well heterostructures”. Poster at ICPS, Zurich, Switzerland, (2012).

 

*A. Sakri, C. Robert, C. Cornet, L. Pedesseau, J. Even and J. M. Jancu. “Intrinsic optical confinement for ultrathin InAsN quantum well superlattices”. Poster at ICPS, Zurich, Switzerland, (2012).

 

*C. Robert, T. Nguyen Thanh, C. Cornet, P. Turban, M. Perrin, A. Balocchi, N. Bertru, J. Even, J.M. Jancu, S. Tricot, O. Durand, X. Marie and A. Le Corre. “(In,Ga)As/GaP quantum dots for monolithic integration on silicon”. Poster at ICPS, Zurich, Switzerland, (2012).

 

*T. Nguyen Thanh, C. Robert, C. Cornet, W. Guo, A. Létoublon, M. Perrin, N. Bertru, J. Even, N. Chevalier, H. Folliot, S. Loualiche, A. Ponchet, G. Elias, J.S. Micha, O. Durand and A. Le Corre. “Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si” Talk at SPIE Photonics West, (2012).

 

*W. Guo, T. Nguyen Thanh, A. Létoublon, G. Elias, C. Cornet, A. Ponchet, A. Bondi, T. Rohel, N. Bertru, C. Robert, O. Durand, J.S. Micha, M. Perrin, J. Even, S. Loualiche and A. Le Corre. “Structural characterisation of GaP/Si nanolayers” Talk at E-MRS 2011, Nice, France, June (2011).

 

*T. Nguyen Thanh, C. Robert, C. Cornet, P. Turban, S. Tricot, O. Dehaese and A. Le Corre. “Single InAs/InP quantum dashes and dots morphology on (001) and (113)B substrates” Poster at Quantum dot France 2011, Toulouse, France, 16 June 2011.

 

*C. Robert, T. Nguyen Thanh, C. Cornet, N. Bertru, N. Chevalier, J. Even, O. Durand and A. Le Corre. “Room temperature photoluminescence of InxGa1-xAs quantum dots on GaP substrate” Talk at Quantum dot France 2011, Toulouse, France, 16 June 2011.

 

*W. Guo, T. Nguyen Thanh, G. Elias, A. Létoublon, C. Cornet, A. Ponchet, A. Bondi, T. Rohel, N. Bertru, C. Robert, O. Durand, J.S. Micha and A. Le Corre. “Structural characterisation of GaP/Si nanolayers” Poster at IPRM 2011, Berlin, Germany, May 2011.

 

*C. Cornet, C. Robert, T. Nguyen Thanh, W. Guo, A. Bondi, G. Elias, A. Létoublon, S. Richard, J.-P. Burin, M. Perrin, J. M. Jancu, O. Durand, J. Even, S. Loualiche, H. Folliot, N. Bertru, A. Ponchet and A. Le Corre. “Carrier Injection in GaAsPN/GaPN Quantum Wells on Silicon” Talk at IPRM 2011, Berlin, Germany, May 2011.

 

*A. Bondi, C. Cornet, W. Guo, O. Dehaese, N. Chevalier, C. Robert, T. Nguyen Thanh, S. Richard, M. Perrin, A. Létoublon, J. P. Burin. J. Even, O. Durand and A. Le Corre. “MBE growth of (GaAsPN/GaPN)/GaP quantum wells light emitting diode” Talk at euro-MBE 2011, L’Alpe d’Huez, France, March 2011.

 

*W. Guo, G. Elias, A. Létoublon, C. Cornet, A. Ponchet, A. Bondi, T. Rohel, N. Bertru, C. Robert, T. Nguyen Thanh, O. Durand, J.S. Micha and A. Le Corre. “Structural characterization of MBE grown GaP/Si nanolayers” Poster at euro-MBE 2011, L’Alpe d’Huez, France, March 2011.

 

*C. Cornet, P. Turban, N. Bertru, S. Tricot, O. Dehaese and A. Le Corre. “Single InAs quantum dots morphology and local electronic properties on (113)B InP substrate” Poster at euro-MBE 2011, L’Alpe d’Huez, France, March 2011.

 

*A. Létoublon, W. Guo, C. Cornet, A. Bondi, O. Durand, T. Rohel, O. Dehaese, N. Chevalier, N. Bertru, A. Le Corre, M. Véron and A. Boulle. “Thermodynamic evolution of Anti-Phase Boundaries (APB) during MBE heterogeneous growth of GaP/Si” International MBE 2010 conference, Berlin, Germany (poster), August 2010.

 

*J. Even, S. Boyer-Richard, C. Cornet, L. Pedesseau, A. Schliwa and D. Bimberg. “Semi-analytical evaluation of linear and non-linear piezoelectric potential for quantum nanostructures with axial symmetry” EMSNSDM Workshop, Manchester, UK, (poster), June 2010.

 

*J. Even, F. Grillot, K. Veselinov, R. Piron, C. Cornet, F. Dore, L. Pedesseau, A. Le Corre, S. Loualiche, P. Miska, X. Marie, M. Gioannini and I. Montrosset "Analysis of carriers dynamics and laser emission in 1.55 mm InAs/InP(113)B quantum dot lasers" SPIE-Photonics Europe, Brussels, Belgium, (poster) 12-16 april (2010).

 

*W. Guo, A. Létoublon, C. Cornet, T. Rohel, N. Chevalier, O. Dehaese, A. Bondi, A. Le Corre, O. Durand, J. Even and S. Loualiche "Fundamental studies for coherent growth of III-V materials on silicon: toward photonics on Silicon" European Material Research Society (E-MRS) 2009 SPRING MEETING  Strasbourg, France, (oral)  8-12 June (2009).

 

*G. Elias, C. Cornet, P. Caroff, C. Levallois, A. Létoublon, C. Paranthoën, N. Bertru, A. Le Corre, S. Loualiche "Self-organized growth of InAs quantum dots on InP substrate emitting at 1.55-μm" Second French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER-2009) Tohoku University, Japan, (oral) 29 nov.- 4 dec. (2009).

 

*S. Richard, J.-P. Burin, C. Labbé, C. Cornet, H. Folliot, C. Paranthoën, A. Nakkar, T. Rohel, F. Thoumyre, K. Tavernier and S. Loualiche "Photocurrent study of InAs/GaInAsP(Q1.18) quantum dots" International conference on Indium Phosphide and Related Materials Conference, Versailles, France, (poster) 26-29 may (2008).

 

*W. Guo, A. Bondi, B. Alsahwa, C. Cornet, A. Létoublon, N. Chevalier, H. Folliot, A. Le Corre, J. Even and S. Loualiche. "Growth of InAs and InP nanostructure on GaP substrate for Photonics on Silicon", Trends in Nanotechnology (TNT), Oviedo, Espagne, (poster) 1-5 September (2008).

 

*W. Guo, A. Bondi, B. Alsahwa, C. Cornet, A. Létoublon, N. Chevalier, H. Folliot, A. Le Corre, J. Even and S. Loualiche. "Toward a light-emitter on Si: Growth of InAs and InP nanostructure on GaP substrate" SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Rennes, France, (poster) 7-8 july (2008).

 

*A. Bondi, W. Guo, L. Pedesseau, S. Boyer-Richard, H. Folliot, C. Cornet, C. Labbé, A. Le Corre, J. Even, A. Moréac and S. Loualiche "Preliminary results for the realization of light emitters on silicon substrate" SQDA (International Workshop on Semiconductor Quantum Dot Devices and Applications), Rennes, France, (poster) 7-8 jul. (2008).

 

*S. Richard, J.-P. Burin, C. Cornet, T. Rohel, A. Nakkar and F. Thoumyre. "Photocurrent spectroscopy of InAs/GaInAsP(Q1.18) quantum dots" LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Rennes, France, 5-6 jul. (2007).

 

*L. Pedesseau, J. Even, F. Doré and C. Cornet "Atomic calculations applied to semiconductor hetero and nanostructures" International Conference of Computational Methods in Sciences and Engineering 2007, Corfou, Greece, 25-30 sept. (2007).

 

*L. Pedesseau, C. Cornet, J. Even, P. Y. Prodhomme and P. Blaise "Study of InAs/GaP interfaces from fisrt-principles modelling" LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Rennes, France, 5-6 Jul. (2007).

 

*A. Nakkar, H. Folliot, A. Le Corre, I. Alghoraibi, C. Labbé, J.-M. Lamy, C. Cornet and S. Loualiche "Optical properties and morphology of the quantum dots InAs/InP (311)B characterized by photoluminescence" LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Rennes, france, 5-6 Juil. (2007).

 

*J. Even, F. Doré, C. Cornet, L. Pedesseau, A. Schliwa and D. Bimberg "Semi-analytical evaluation of linear and non-linear potentials for quantum nanostructures with axial symmetry" LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Rennes, France, 5-6 July (2007).

 

*J. Even, F. Doré, C. Cornet, L. Pedesseau, A. Schliwa and D. Bimberg "Electronic properties and non-linear piezoelectric potential in narrow gap strained semiconductor quantum nanostructures with axial symmetry" Sancharmod 2007 (2nd SANDiE Workshop on Characterization and modelling of self-assembled semiconductor nanostructures), Paris, France, 12-13 dec. (2007).

 

*J. Even, F. Doré, C. Cornet, L. Pedesseau, A. Schliwa and D. Bimberg. "Coupled Mechanical/ Piezoelectric/ Quantum Simulation of Strained Semiconductor InAs Quantum dots (QD) Emitting at Long Wavelength" COMSOL Europe, Grenoble, France, 23-24 Oct. (2007).

 

*C. Cornet, O. Dehaese, L. Pedesseau, I. Alghoraibi, T. Rohel, A. Létoublon, J. Even, N. Bertru, A. Le Corre and S. Loualiche. "Stransky-Krastanow Gas Source MBE growth and optical properties of InAs/GaP quantum dots" Talk at Euro-MBE, Sierra Nevada, Granada, Spain, 5-7 march (2007).

 

*G. Elias, A. Létoublon, P. Caroff, I. Alghoraibi, C. Cornet, A. Le Corre, A. Ponchet, O. Dehaese and N. Bertru “Study of InAs/InP (311)B stacked quantum dots for laser emission at 1.55 µm”, LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Rennes, France, (poster) 5-6 July (2007).

 

*N. Chauvin, E. Dupuy, R. Djondang, M. Gendry, G. Bremond, C. Cornet, and J. Even and C. B.-Chevalier "Influence of shape and size of InAs/InP (001) quantum islands grown by SSMBE on the microphotoluminescence emission in the 1.5 µm spectral range" LWQD (International Workshop on Long Wavelength Quantum Dots : Growth and Applications), Rennes, France, (poster) 5-6 July (2007).

 

*C. Labbé, C. Cornet, H. Folliot, P. Caroff , C. Levallois, O. Dehaese, J. Even, A. LeCorre and S. Loualiche "Dynamics spectroscopy in 1.55 µm InAs/InP quantum dots under high resonant excitation" IWSQDA (International Workshop on Semiconductor quantum dot based devices and applications), Institut Curie, Paris, France, 16-17 march (2006).

 

*C. Labbé, C. Cornet, H. Folliot, P. Caroff, C. Levallois, O. Dehaese, J. Even, A. Le Corre and S. Loualiche "Carrier relaxation dynamics of 1.55 µm InAs/InP quantum dots under high resonant excitation" ICPS (International Conference on Physics of Semiconductors), Vienne, Austria, 24-28 jul. (2006).

 

*C. Labbé, C. Cornet, H. Folliot, P. Caroff, C. Levallois, O. Dehaese, J. Even, A. Le Corre and S. Loualiche "Exciton and biexciton lifetimes in InAs/InP quantum dots emitting at 1.55 µm wavelength under high resonant excitation " ICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Istanbul, Turkey, (oral) 30 jul- 4 aug (2006).

 

*M. Hayne, C. Cornet, J. Even, C. Labbé, H. Folliot, V. V. Moshchalkov and S. Loualiche "Charge carrier redistribution in ordered Arrays of laterally coupled self-assembled quantum dots" UK Compound Semiconductors, Sheffield, UK, 5-6 jul. (2006).

 

*F. Doré, J. Even, C. Cornet, A. Schliwa, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre and S. Loualiche "A theoretical and experimental study of 1-2 µm photoluminescence of quantum dots on InP  substrate" ICPS (International Conference on Physics of Semiconductors), Vienne, Austria, 24-28 jul. (2006).

 

*F. Doré, C. Cornet, A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. LeCorre and S. Loualiche "First observation of 2.4 microns photoluminescence of InAsSb quantum dots on InP substrate"

4th International Conference on Quantum Dots, Chamonix-Mont Blanc, Chamonix, France, 1-5 may (2006).

 

*C. Cornet, M. Hayne, A. Schliwa, F. Dore, C. Labbé, J. Even, D. Bimberg, V. V. Moshchalkov and S. Loualiche

"Theory and experiment of InAs/InP quantum dots: from calculations to laser emission" ICPS series, 28th International Conference on the Physics of Semiconductor.Vienne, Austria, 24-28 jul. (2006).

 

*C. Cornet, M. Hayne, A. Schliwa, F. Doré, J. Even, D. Bimberg, V. V. Moshchalkov and S. Loualiche "InAs/InP quantum dots (QD) properties: How to improve QD laser performance" International Workshop on Semiconductor Quantum Dot Based Devices and Applications, Paris, France, 16-17 March (2006).

 

*C. Cornet, M. Hayne, A. Schliwa, F. Dore, J. Even, D. Bimberg, V. V. Moshchalkov and S. Loualiche "InAs/InP quantum dots : from fundamental understanding to coupled QD laser applications" Proceedings of the 4th "International Conference on Quantum Dots", Chamonix-Mont Blanc, France, 1-5 may (2006).

 

*C. Cornet, M. Hayne, A. Schliwa, F. Dore, J. Even, D. Bimberg, V. V. Moshchalkov and S. Loualiche "InAs/InP quantum dots (QD): from fundamental understanding to coupled QD 1.55 µm laser applications" ICSSN (International Conference on SuperLattices, Nano-structures and Nano-Devices), Istanbul, Turkey, 30 jul.- 4 aug. (2006).

 

*C. Cornet, C. Levallois, P. Caroff, L. Joulaud, H. Folliot, C. Labbé, J. Even, A. Le Corre, S. Loualiche, M. Hayne and V. V. Moshchalkov, C. Celebi and P. M. Koenraad "Optical characterisation of InAs/InP self-assembled quantum dots for optimisation of lasing properties" oral presentation at the Sandie Optics Task Force meeting, Technische Universitat Berlin, Berlin, Deutschland, January 12-13 (2006).

 

*P. Miska, K. Veselinov, F. Grillot, J. Even, C. Platz, C. Cornet, C. Paranthoen, N. Bertru, C. Labbé, O. Dehaese, H. Folliot, A. Le Corre, S. Loualiche, G. Moreau, J.-C. Simon, X. Marie and A. Ramdane "Carrier dynamics and saturation effect in (311)B InAs/InP quantum dot lasers" International Workshop on Physics and Applications of Semiconductor Lasers (PHASE), Metz, France, 29-30 march (2005).

 

*J. Even, C. Cornet, F. Doré, A. Schliwa, A. Ballestar, N. Bertru, A. Le Corre, H. Folliot, R. Piron and S. Loualiche "InAsSb/InP quantum dots for midwave infrared emitters : a theoretical study" MIOMD-VII, Mid-infrared Optoelectronics: Materials and Devices, Lancaster, UK, Lancaster, RU, 12-14 sept. (2005).

 

*F. Doré, C. Cornet, P. Caroff, A. Schliwa, A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre and S. Loualiche "InAsSb/InGaAs quantum nanostructures on InP (100) substrate : observation of 2.35 microns photoluminescence" International Symposium on Compound Semiconductors,

Rust, Germany, sept. (2005).

 

*F. Doré, C. Cornet, P. Caroff , A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, R. Piron, H. Folliot, A. Le Corre and S. Loualiche "First observation of lamda greater than 2 micron photoluminescence of quantum dots on InP substrate" MIOMD-VII, Mid-infrared Optoelectronics: Materials and Devices, Lancaster, UK, Lancaster, RU, 12-14 sept. (2005).

 

*F. Doré, C. Cornet, A. Ballestar, J. Even, N. Bertru, O. Dehaese, I. Alghoraibi, H. Folliot, R. Piron, A. Le Corre and S. Loualiche "First observation of 2.4 µm photoluminescence of InAsSb/InP quantum dots on InP(100) substrate" NGS12:12th International Conference on Narrow Gap Semiconductors, Toulouse, France, 3-5 jul. (2005).

 

*J. Even, C. Cornet and S. Loualiche "Exact solutions of the Schrödinger equation in disk-shaped quantum dots and rings, infinite and finite confinement potentials, Stark and excitonic effect" Workshop European Centre for Atomic and Molecular Computations (CECAM): Modeling of self-assembled semiconductor nanostructures,

Lyon, France, 28-30 June (2004).

 

*C. Cornet, C. Platz, P. Miska, C. Labbé, H. Folliot, J. Even and S. Loualiche "Reciprocal space description of the electronic coupling between a wetting layer and a QD superlattice plane" Workshop European Centre for Atomic and Molecular Computations (CECAM): Modeling of self-assembled semiconductor nanostructures,

Lyon, France, 28-30 June (2004).

 

*C. Cornet, C. Platz, J. Even, P. Miska, C. Labbé, H. Folliot and S. Loualiche "Theoretical description of the electronic coupling  between a wetting layer and a QD superlattice plane" ICPS series, 27th International Conference on the Physics of Semiconductor, Northern Arizona University, Flagstaff, Arizona, USA, 25-30 Jul. (2004).

 

d) –Communications with national audience

 

 

*Y.Ping Wang, A. Létoublon,  T. Nguyen Thanh, C. Cornet, N. Bertru, N. Boudet, J. Stodolna, A. Ponchet, J. Even, A. Le Corre and O. Durand.  “Analyse quantitative des antiphases dans des nanocouches épitaxiales GaP/Si pour la photonique sur silicium”, “Rayons X et matière 2015 Grenoble, France, 01-04 December 2015.

 

*P. Guillemé, J. Stervinou, T. Rohel, P. Rochard, A. Letoublon, C. Cornet, Y. Dumeige, P. Féron, O. Durand, Y. Léger.  “Investigation des propriétés optiques des micro-disques de GaP pour l’intégration de fonctions optiques sur silicium”, Talk at “Optique Bretagne 2015 Rennes, France, 06-09 July 2015.

 

*M. Da Silva, S. Almosni, C. Cornet, A. Létoublon, C. Levallois, A. Rolland, J. Even, L. Pédesseau, S. Wang, A. Le Corre, S. Loualiche, P. Rale, L. Lombez, J.-F. Guillemoles, F. Mandorlo, M. Lemiti, and O. Durand.  “ Vers les cellules solaires à haut rendement à base de composés III-V sur substrats bas-couts de silicium”, Poster at “Optique Bretagne 2015 Rennes, France, 06-09 July 2015.

 

*R. Tremblay, Y. Huang, J.P. Gauthier, R. Piron, A. Beck, C. Levallois, C. Paranthoën, J. P Burin, L. Pedesseau, J. Even, T. Rohel, K. Tavernier, J.Stervinou, A. Balocchi, H. Carrère, X. Marie, O. Durand, Y. Léger and C. Cornet.  Electroluminescence de boites quantiques InGaAs/GaP et ingénérie de bande des couches d’injection laser AlGaP/GaP”, Poster at “Optique Bretagne 2015 Rennes, France, 06-09 July 2015.

 

*O. Durand, S. Almosni, Y.Ping Wang, C. Cornet, A. Létoublon, C. Levallois, L. Pedesseau, A. Rolland, J. Even, N. Bertru, A. Le Corre, A. Ponchet, P. Rale, L. Lombez, J.-F. Guillemoles.  “Epitaxie cohérente de composés GaP et GaAsPN à azote dilué sur substrats de Si pour l’élaboration de cellules PV tandem III-V/Si”, Talk at “Matériaux 2014 Montpellier, France, 24-28 November 2014.

 

*Y. Ping Wang, T. Nguyen Thanh, A. Létoublon, C. Cornet, N. Bertru, N. Boudet, J. Stodolna, A. Ponchet, J. Even, A. Le Corre and O. Durand. “Analyse quantitative des micromacles dans des nanocouches épitaxiales GaP/Si pour la photonique sur silicium”, Poster presentation at “Xème colloque rayons X et matière Nantes, France, 12-15 November 2013.

 

*A. Létoublon, T. Nguyen Thanh, Y.Ping Wang, S. Almosni, C. Cornet, N. Bertru, N. Boudet, J. Stodolna, A. Ponchet, E. Tea, J. Even, S. Laribi, A. Le Corre and O. Durand. “Analyse quantitative de la perfection cristalline de nanocouches épitaxiales GaP/Si”, Talk at “Xème colloque rayons X et matière Nantes, France, 12-15 November 2013.

 

*C. Cornet, A. Létoublon and M. Perrin. “Projet ANR jeune chercheur SINPHONIC : vers l’intégration optique sur silicium”, Invited talk at “Trophées Loading the Future – pôle de compétitivité Images et réseaux Rennes, France, 14 November 2013.

 

*P. Râle, L. Lombez, S. Almosni, C. Cornet, O. Durand, J.-F. Guillemoles, “Etude optoélectronique du GaAsPN  dans l’optique de cellules solaires III-V/Si” Poster presentation at “Journées nationales du Photovoltaïque JNPV 2013  Dourdan, France, 3-6 December 2013.

 

*T. Quinci, R. Varache, Y. Ping Wang, C. Cornet, A.  Létoublon, D. Munoz, M. Baudrit, O. Durand, and A. Le Corre. “New concept of photovoltaic heterostructure GaP/c-Si : AFORS-HET simulation and first pseudomorphic approach”, Poster presentation at “Journées nationales du Photovoltaïque JNPV 2013 Dourdan, France, 3-6 December 2013.

 

*S. Almosni, C. Robert, C. Cornet, T. Nguyen Thanh, Y.Ping Wang, P. Rale, L. Lombez, J.-F. Guillemoles, A. Létoublon, C. Levallois, N. Bertru, O. Durand and A. Le Corre. “Optimisation des propriétés structurale de l’interface GaP/Si et des propriétés électroniques de cellules solaires GaAsPN/GaP pour la fabrication de cellule tandem”, Poster presentation at “Journées nationales du Photovoltaïque JNPV 2013 Dourdan, France, 3-6 December 2013.

 

*J. Stodolna, F. Demangeot, A. Ponchet, N. Bertru, O. Durand, C. Cornet, J. Kuyyalil, A. Le Corre, A. Letoublon, T. Nguyen Thanh, Y. Ping Wang and N. Boudet. “Etude par TEM et DRX des défauts cristallins dans des couches épitaxiées par MBE de GaP sur Silicium (001)”, Poster presentation at “Colloque annuel du GDR CNRS Pulse Aix-en-Provence, France, 03-05 July 2013.

 

*J. Even, L. Pedesseau, J.M. Jancu, C. Robert, O. Durand, C. Cornet, R. Benchamekh, P. Voisin, E. Deleporte, C. Katan. “Raccordements de bandes et profils de constantes diélectriques pour des hétérostructures 2D à

semiconducteurs”, Talk at “Colloque annuel du GDR CNRS co-DFT Guidel, France, 21-24 May (2013).

 

*L. Pedesseau, J. Even, J.-M. Jancu, E. Tea, C. Cornet, A. Le Corre and O. Durand. “Contribution of DFT code to photovoltaic applications” poster at JNPV 2012, Chantilly, France (2012).

 

*P. Rale, E. Tea, S. Almosni, C. Cornet, L. Lombez, S. Laribi, L. Pedesseau, J.-M. Jancu, J. Even, O. Durand, and J.F. Guillemoles. “Toward a III-V/Si tandem solar cell: characterization and modeling”, poster at JNPV 2012, Chantilly, France (2012).

 

*S. Almosni, P. Râle, C. Robert, T. Nguyen Thanh, C. Cornet, C. Levallois, A. Létoublon, J. Even, J.M. Jancu, N. Bertru, J.F. Guillemole, O. Durand and A. Le Corre. “Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells”, poster at JNPV 2012, Chantilly, France (2012).

 

*T. Quinci, J. Kuyyalil, T. Nguyen Thanh, C. Cornet, A.  Létoublon, N. Bertru, O. Durand and A. Le Corre. “Growth of III-V GaP on biatomic Si steps using a UHVCVD-MBE cluster” poster at JNPV 2012, Chantilly, France (2012).

 

*C. Robert , C. Cornet, T. Nguyen Thanh, M. Perrin, A. Létoublon, J.M. Jancu, J. Even, P. Turban, S. Tricot, A. Balocchi, X. Marie, S. Loualiche, N. Bertru, O. Durand, and A. Le Corre. “Développement d’un laser sur silicium dans l’approche pseudomorphique”. Talk at JNOG 2012, Lyon, France, (2012).

 

*C. Robert, A. Bondi, J. Even and C. Cornet. “Développement de nanostructures sur silicium pour l’émission laser à grande longueur d’onde” Talk at JNRDM 2011, Paris, France, May 2011.

 

*C. Cornet, A. Létoublon, W. Guo, A. Bondi, S. Boyer-Richard, T. Rohel, N. Chevalier, O. Dehaese, K. Tavernier, M. Perrin, J.-M. Jancu, O. Durand, N. Bertru, J. Even, S. Loualiche, H. Folliot and A. Le Corre. “Croissance hétérogène de semi-conducteurs III-V sur silicium : vers l’optoélectronique sur silicium” Conférence PONANT 2010 Rennes, Rennes, France, (talk) July 2010.

 

*C. Cornet, A. Létoublon, J. Lapeyre, C. Paranthoën, C. Levallois, N. Bertru, and A. Le Corre. caractérisation de semi-conducteurs III-V nanostructurés par microscopie à force atomique”, Journées de la microscopie champ proche Bretagne, Rennes, France, (talk) June 2010.

 

*C. Cornet, “Intégration cohérente de l'optique sur Silicium pour des applications à la télécommunication et au photovoltaïque” Journée Scientifique Jeunes Chercheurs MMS Mesure, Modélisation et Simulation Rennes, France, (invited talk) June 2010.

 

*A. Bondi, W. Guo, H. Folliot, C. Cornet, N. Chevalier, K. Tavernier, S. Richard, A. Moreac, A. Le Corre, J. Even, S. Loualiche, “Réalisation d’une DEL à puits quantiques de GaAsP sur substrat GaP”, INNOV'INSA, Rennes, France, (poster) May 2010.

 

*W. Guo, A. Létoublon, C. Cornet, T. Rohel, N. Chevalier, O. Dehaese, A. Bondi, A. Le Corre, O. Durand, and S. Loualiche, "Heterogeneous growth of III-V material  on Si (001) substrate for photonics applications"

Journées annuelles de la société française de métallurgie (SF2M), Université Rennes 1, France, (poster) 17-19 june (2009).

 

*W. Guo, A. Letoublon, A. Bondi, C. Cornet, J. Even, O. Durand, A. Le Corre and S. Loualiche. "Growth and characterization of single phase GaP on Si(001)"  Colloque de l’Association Française de Cristallographie (AFC), Rennes, France, (poster) 7-10 july (2008).

 

*W. Guo, A. Bondi, H. Folliot, C. Cornet, A. Letoublon, O. Dehaese, A. Le Corre, O. Durand, J. Even and S. Loualiche. "Croissance par MBE de Boites quantiques InP sur GaP/Si" 2èmes Journées Nanosciences de Bretagne (JNB2), Nantes, France, (poster) 5-6 june (2008).

 

*L. Pedesseau, J. Even, F. Doré, C. Cornet, A. Schliwa and D. Bimberg. "Simulation en symétrie axiale, couplée mécanique/piezoelectrique/quantique, d'îlots quantiques à faible gap" GDR Nanoélectronique, Lille, France, 6-7 Dec. (2007).

 

*L. Pedesseau, C. Cornet, F. Doré, P. Y. Prodhomme, P. Blaise and J. Even. "Simulation of electronic properties of semiconductor nanostructures for optoelectronic applications",  Journées de GDR-DFT

Autrans, France, 27-30 March (2007).

 

*J. Even, C. Cornet and F. Doré. "Ecrantage par un gaz d’électrons 2D-3D : application à la relaxation Auger dans les îlots InAs/InP" 11ème  JNMO (Journées Nano-Micro Electronique et Optoélectronique), Aussois, France, 4-6 april (2005).

 

*C. Labbé, J. Even, C. Cornet, H. Folliot, P. Caroff, C. Levallois, O. Dehaese, A. Le Corre and S. Loualiche "Dynamique des boites quantiques InAs/InP émettant à 1,55 µm à l'aide d'une excitation résonante" 11ème  JNMO (Journées Nano-Micro Electronique et Optoélectronique), Aussois, France, 4-6 apr. (2005).

 

*F. Doré, A. Ballestar, C. Cornet, N. Bertru, O. Dehaese, I. Alghoraibi, R. Piron, J. Even and S. Loualiche "Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5 µm)" COLOQ 9 (Colloque sur les Lasers et l'Optique Quantique), Dijon, France, 7-9 sept. (2005).

 

*C. Cornet, M. Hayne, C. Levallois, P. Caroff, E. Homeyer, J. Even, C. Paranthoen, H. Folliot, C. Labbé and S. Loualiche. "Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement" COLOQ 9 (Colloque sur les Lasers et l'Optique Quantique), Dijon, France, 7-9 sept. (2005).

 

*C. Cornet, C. Labbé, J. Even, C. Platz, O. Dehaese, H. Folliot, P. Miska, A. Sakri, J.-P. Burin and S. Loualiche "Mesure directe de l'absorption optique à 1,55 µm de boîtes quantiques InAs/InP (113)B et étude de l'influence du couplage boîte/couche de mouillage sur les propriétés électroniques" JMC9: Journées de la matière Condensée, Nancy, France, (oral) 30 aug-3 sept (2004).

 

 

 

f) –Books

 

 

*C. Cornet “propriétés électroniques, optiques et dynamiques de boites quantiques auto-organisées et couplées sur substrat InP”, Editions Universitaires Européennes, february (2011).