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FOTON-OHM UMR CNRS 6082            



Publications : 2013, 2012, 2011, 2010,  and before

  1. «Ultrafast tristable spin memory of a coherent polariton gas», Cerna R., Léger Y., Paraïso T. K., Wouters M., Morier-Genoud F., Portella-Oberli M. T., Deveaud B., Nature Communications (publisher: Nature Publishing, e-ISSN: 2041-1723), 4 2008 (2013) 10.1038/ncomms3008

  2. «Modulation properties of optically injection-locked quantum cascade lasers», Wang C., Grillot F., Kovanis V., Bodyfelt J., Even J., Optics Letters, 187971 (2013) 10.1364/OL.38.001975

  3. «Investigation of Injection-Locked Quantum Cascade Lasers based on Rate equations», Wang C., GRILLOT F., Kovanis V., Even J., Journal of Applied Physics, 113 6 063104 (2013) 10.1063/1.4790883

  4. « VCSEL Based on InAs Quantum-Dashes With a Lasing Operation Over a 117-nm Wavelength Span", Taleb F., Levallois C., Paranthoen C., Gauthier J.-P. Chevalier N., Perrin M., Leger Y., De Sagazan O., Le Corre A., IEEE Photonics Technology Letters 25(21) 2126 (2013) 10.1109/LPT.2013.2282084
  6. « Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy», Bondi, A., Cornet, C., Richard, S., Nguyen, T., Létoublon, A.,Pedesseau, L., Durand., Moréac, A., Ponchet, A.; Le Corre, A., Even, J., Thin Solid Films, 541 72 (2013) 10.1016/j.tsf.2012.11.132

  7. « Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates», Nguyen, Thanh Tra; Robert, Cédric; Giudicelli, Emmanuel; Létoublon, Antoine; Cornet, Charles; Ponchet, A.; Rohel, Tony; Balocchi, Andrea; Micha, J.-S.; Perrin, Mathieu; Loualiche, Slimane; Marie, Xavier; Bertru, N., Durand, Olivier; Le Corre, Alain, Journal of Crystal Growth, 378 25 (2013) 10.1016/j.jcrysgro.2012.11.046

  8. «Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers», Nguyen, T., Robert, C., Létoublon, A., Cornet, C., Quinci, T., Giudicelli, E., Almosni, S.,; Boudet, N., Ponchet, A., Kuyyalil, J., Danila, M.,; Durand, O., Bertru, N., Le Corre, A., Thin Solid Films, 541 36 (2013) 10.1016/j.tsf.2012.11.116

  9. «Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells», S. Almosni, C. Robert, T. Nguyen Thanh, C. Cornet, A. Létoublon, T. Quinci, C. Levallois, M. Perrin, J. Kuyyalil, L. Pedesseau, A. Balocchi, P. Barate, J. Even, J. M. Jancu, N. Bertru, X. Marie, O. Durand, and A. Le Corre, J. Appl. Phys. 113 123509 (2013) 10.1063/1.4798363

  10. Nitrogen-phosphorus competition in the molecular beam epitaxy of GaPN», J. Kuyyalil, T. Nguyen Thanh, T. Quinci, S.Almosni, A. Létoublon, T. Rohel, N. Bertru, A. Le Corre, O. Durand, C. Cornet, J. Cryst. Growth,377 17 (2013) 10.1016/j.jcrysgro.2013.04.052

  11. Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster», T. Quinci, J. Kuyyalil, T.Nguyen Thanh, Y.Ping Wang, S. Almosni, A. Létoublon, T. Rohel, K. Tavernier, N. Chevalier, O. Dehaese, N. Boudet, J.F. Bérar, S. Loualiche, J. Even, N. Bertru, A. Le Corre, O. Durand, C. Cornet,   J. Cryst. Growth 380, 157.(2013) 10.1016/j.jcrysgro.2013.05.022

  1. «Oxide-confined mid-infrared VCSELs», Laaroussi Y., Sanchez D., Cerutti L., Levallois C., Paranthoën C., Rumeau A., Tourte C., Almuneau G., Electronics Letters, 48 25 1616-1618 (2012) 10.1049/el.2012.3572

  2. «Vibrational properties of SrCu2O2 studied via Density Functional Theory calculations and compared to Raman and infrared spectroscopy measurements», Even J., Pedesseau L., Durand O., Modreanu M., Huyberechts G., Servet B., Chaix-Pluchery O., Thin Solid Films, in Press (2012) 10.1016/j.tsf.2012.10.130

  3. «Vibrational properties of 2H-PbI2 semiconductors studied via Density Functional Theory calculations», Pedesseau L., Even J., Katan C., Raouafi F., Wei Y., Deleporte E., Jancu J.-M., Thin Solid Films, 541 9-11 (2012) 10.1016/j.tsf.2012.10.129

  4. «An electronic model for self-assembled hybrid organic/perovskite semiconductors: reverse band edge electronic states ordering and spin-orbit coupling», Even J., Pedesseau L., Dupertuis M.-A., Jancu J.-M., Katan C., Physical Review B, 86 20 205301 (2012) 10.1103/PhysRevB.86.205301

  5. «Modulation Properties of Self-Injected Quantum-Dot Semiconductor Diode Lasers», Grillot F., Wang C., Naderi N. A., Even J., IEEE Journal of Selected Topics in Quantum Electronics, 19 1900812 (2012) 10.1109/JSTQE.2013.2246776

  6. «Modeling the nanoscale: the Slater-Koster approach», Raouafi F., Ben Chamekh R., O. Nestoklon M., Voisin P., Jancu J.-M., advance in condensed matter physics (2012)

  7. «Dynamics of dark-soliton formation in a polariton quantum fluid», Grosso G., Nardin G., Morier-Genoud F., Léger Y., Deveaud-Plédran B., Physical Review B, 86 020509 (2012) 10.1103/PhysRevB.86.020509

  8. «Enhancement of the polarization stability of a 1.55 µm emitting vertical-cavity surface-emitting laser under modulation using quantum dashes», Gauthier J.-P., Paranthoën C., Levallois C., Shuaib A., Lamy J.-M., Folliot H., Perrin M., Dehaese O., Chevalier N., Durand O., Le Corre A., Optics Express, 20 15 16832-16837 (2012) 10.1364/OE.20.016832

  9. «Optical properties of ultrathin InAs quantum-well-heterostructures», Samti R., Raouafi F., Chaouach M., Maaref M., Sakri A., Even J., Gérard J.-M., Jancu J.-M., Applied Physics Letters, 101 1 012105 (2012) 10.1063/1.4731783

  10. «Impacts of Wetting Layer and Excited State on the Modulation Response of Quantum-Dot Lasers», Wang C., Grillot F., Even J., IEEE Journal of Quantum Electronics, 48 9 1144 (2012) 10.1109/JQE.2012.2205224

  11. «Theory and Modelling for the Nanoscale: The spds* Tight Binding Approach. Tight-binding/pseudo-potential calculations», Benchamekh R., Nestoklon M., Jancu J.-M., Voisin P., Springer Series in Materials Science, 159 19-39 (2012) 10.1007/978-3-642-27512-8_2

  12. «Spin splitting of electron states in (110) quantum wells: Symmetry analysis and k.p theory versus microscopic calculations», O. Nestoklon M., A. Tarasenko S., Jancu J.-M., Voisin P., Physical Review B, 85 205307 (2012) 10.1103/PhysRevB.85.205307

  13. «Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate», Salman S., Folliot H., Le Pouliquen J., Chevalier N., Rohel T., Paranthoën C., Bertru N., Labbé C., Létoublon A., Le Corre A., Material Science and Engineering B, http://dx.doi.org/10.1016/j.mseb.2012.03.053 (2012) 10.1016/j.mseb.2012.03.053

  14. «Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain», Robert C., Perrin M., Cornet C., Even J., Jancu J.-M., Applied Physics Letters, 100 11 111901 (2012) 10.1063/1.3694028

  15. «Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: A tight binding approach», O. Nestoklon M., Krebs O., Jaffrès H., Ruttala S., George J.-M., Jancu J.-M., Voisin P., Applied Physics Letters, 100 062403 (2012) 10.1063/1.3683525

  16. «On the entanglement of electrostriction and non-linear piezoelectricity in non-centrosymmetric materials», Pedesseau L., Katan C., Even J., Applied Physics Letters, 100 031903 (2012) 10.1063/1.3676666

  17. «Raman investigation of GaP-Si interfaces grown by molecular beam epitaxy», Bondi A., Cornet C., Richard S., Nguyen T. T., Létoublon A., Pedesseau L., Durand O., Moréac A., Ponchet A., Le Corre A., Even J., Thin Solid Films, (in press) (2012) 10.1016/j.tsf.2012.11.132

  18. «Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys», Cornet C., Nguyen T. T., Quinci T., Almosni S., Rohel T., Kuyyalil J., Rambaud A., Létoublon A., Bertru N., Durand O., Le Corre A., Applied Physics Letters, 101 25 251906 (2012) 10.1063/1.4772785

  19. «41 GHz and 10.6 GHz low threshold and low noise InAs/InP quantum dash two-section mode-locked lasers in L band», Dontabactouny M., Piron R., Klaime K., Chevalier N., Tavernier K., Loualiche S., Le Corre A., Larsson D., Rosenberg C., Semenova E., Yvind K., Journal of Applied Physics, 111 23102 (2012) 10.1063/1.3677976

  20. «Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering», Guo W., Bondi A., Cornet C., Létoublon A., Durand O., Rohel T., Richard S., Bertru N., Loualiche S., Even J., Le Corre A., Applied Surface Science, 258 2808 (2012) 10.1016/j.apsusc.2011.10.139

  21. «Nonlinear carrier dynamics in a quantum dash optical amplifier», Lunnemann P., Ek S., Yvind K., Piron R., Mørk J., New Journal of Physics, 14 13042 (2012) 10.1088/1367-2630/14/1/013042

  22. «Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates», Nguyen T. T., Robert C., Giudicelli E., Létoublon A., Cornet C., Ponchet A., Rohel T., Balocchi A., Micha J.-S., Perrin M., Loualiche S., Marie X., Bertru N., Durand O., Le Corre A., Journal of Crystal Growth, (in press) (2012) 10.1016/j.jcrysgro.2012.11.046

  23. «Synchrotron X-ray diffraction analysis for quantitative defect evaluation in GaP/Si nanolayers», Nguyen T. T., Robert C., Létoublon A., Cornet C., Quinci T., Giudicelli E., Almosni S., Boudet N., Ponchet A., Kuyyalil J., Danila M., Durand O., Bertru N., Le Corre A., Thin Solid Films, (in press) (2012) 10.1016/j.tsf.2012.11.116

  24. «Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon», Nguyen T. T., Robert C., Guo W., Létoublon A., Cornet C., Elias G., Ponchet A., Rohel T., Bertru N., Balocchi A., Durand O., Micha J.-S., Perrin M., Loualiche S., Marie X., Le Corre A., Journal of Applied Physics, 112 5 053521 (2012) 10.1063/1.4751024

  25. «Atomistic simulations of the optical absorption of type II CdSe/ZnTe superlattices», Richard S., Robert C., Gérard L., Richters J.-P., André R., Bleuse J., Mariette H., Even J., Jancu J.-M., Nanoscale Research Letters, 7 543 (2012) 10.1186/1556-276X-7-543

  26. «Theoretical and experimental studies of (In,Ga)As/GaP quantum dots», Robert C., Nguyen T. T., Cornet C., Turban P., Perrin M., Balocchi A., Folliot H., Bertru N., Pedesseau L., Nestoklon M., Even J., Jancu J.-M., Tricot S., Durand O., Marie X., Le Corre A., Nanoscale Research Letters, 7 1 643 (2012) 10.1186/1556-276X-7-643

  27. «Electronic, optical and structural properties of (In,Ga)As/GaP quantum dots», Robert C., Cornet C., Turban P., Nguyen Thanh T., M. O. N., Even J., Jancu J.-M., Perrin M., Folliot H., Rohel T., Tricot S., Balocchi A., Lagarde D., Marie X., Bertru N., Durand O., Le Corre A., Physical Review B, 86 205316 (2012) 10.1103/PhysRevB.86.205316

  1. «Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots», Nguyen T. T., Robert C., Cornet C., Perrin M., Jancu J.-M., Bertru N., Even J., Chevalier N., Folliot H., Durand O., Le Corre A., Applied Physics Letters, 99 143123 (2011) 10.1063/1.3646911

  2. «30-band k*p method for quantum semiconductor heterostructures», Richard S., Raouafi F., Bondi A., Pedesseau L., Katan C., Jancu J.-M., Even J., Applied Physics Letters, 98 251913 (2011) 10.1063/1.3600643

  3. «Room temperature operation of GaAsP(N)/GaP(N) quantum well based light-emitting diodes: Effect of the incorporation of nitrogen», Robert C., Bondi A., Nguyen T. T., Even J., Cornet C., Durand O., Burin J.-P., Jancu J.-M., Guo W., Létoublon A., Folliot H., Richard S., Perrin M., Chevalier N., Dehaese O., Tavernier K., Loualiche S., Le Corre A., Applied Physics Letters, 98 251110 (2011) 10.1063/1.3601857

  4. «Sputtered hydrogenated amorphous silicon thin films for distributed Bragg reflectors and long wavelength vertical cavity surface emitting lasers applications», Shuaib A., Levallois C., Gauthier J.-P., Paranthoen C., Durand O., Cornet C., Chevalier N., Le Corre A., Thin Solid Films, 519 18 6178-6182 (2011) 10.1016/j.tsf.2011.04.111

  5. «Tunable semiconductor vertical-cavity surface-emitting laser with an intracavity liquid crystal layer», Castany O., Dupont L., Shuaib A., Gauthier J.-P., Levallois C., Paranthoen C., Applied Physics Letters, 98 16 161105 (2011) 10.1063/1.3569591

  6. «Interpretation of the two-components observed in high resolution X-ray diffraction ω scan peaks for mosaic ZnO thin fi lms grown on c-sapphire substrates using pulsed laser deposition», Durand O., Létoublon A., Rogers D.J., Hosseini Teherani F., Thin Solid Films, 519 6369 (2011) 10.1016/j.tsf.2011.04.036

  7. «Enhanced Properties in Single-Walled Carbon Nanotubes Based Saturable Absorber for All Optical Signal Regeneration», Nong H., Gicquel-Guézo M., Bramerie L., Perrin M., GRILLOT F., Fleurier R., Liang B., Huffaker D. L., Levallois C., Le Pouliquen J., Le Corre A., Dehaese O., Loualiche S., Japanese Journal of Applied Physics / Japanese Journal of Applied Physics Part 1, 50 04 0206 (2011) 10.1143/JJAP.50.040206

  8. «Ultrafast nonlinear optical properties of bundles of carbon nanotubes», Gicquel-Guézo M., Dappe Y. J., Turban P., Moréac A., Nong H., Loualiche S., Carbon, 49 9 2971 (2011) 10.1016/j.carbon.2011.03.015

  9. «Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure», Lu W., Bozkurt M., Keizer J.G., Rohel T., Folliot H., Bertru N., Koenraad P., Nanotechnology, 22 055703 (2011) 10.1088/0957-4484/22/5/055703

  10. «Ab initio calculation of effective work functions for a TiN/HfO(2)/SiO(2)/Si transistor stack», Prod'homme P.-Y., Fontaine-Vive F., Van Der Geest A., Blaise P., Even J., Applied Physics Letters, 99 022101 (2011) 10.1063/1.3609869

  1. «Position isomerism on one and two photon absorption in multibranched chromophores: a TDDFT investigation.», Katan C., Blanchard-Desce M., Tretiak S., Journal of Chemical Theory and Computation, 6 11 3410-3426 (2010) 10.1021/ct1004406

  2. «Characterization of timing jitter in a 5 GHz quantum dot passively mode-locked laser», Lin C.-Y., Grillot F., Raghunathan R., Lester L. F., Optics Express, pp. 21932-21937 (2010) 10.1364/OE.18.021932

  3. «Spotted Custom Lenses to Tailor the Divergence of Vertical-Cavity Surface-Emitting Lasers», Bardinal V., Reig B., Camps T., Levallois C., Daran E., Vergnenegre C., Leïchlé T., Almuneau G., Doucet J.-B., IEEE Photonics Technology Letters / IEEE Transactions Photonics Technol Lett, 22 21 1592 - 1594 (2010) 10.1109/LPT.2010.2071861

  4. «Achievement of InSb Quantum Dots on InP(100) Substrates», Lu W., Rohel T., Bertru N., Folliot H., Paranthoën C., Jancu J.-M., Létoublon A., Le Corre A., GATEL C., Ponchet A., Combe N., Ulloa J.-M., Koenraad P., Japanese Journal of Applied Physics, part 1 : Regular papers, Short Notes, 49 060210-1 (2010) 10.1143/JJAP.49.060210

  5. «Modeling the Injection-Locked Behavior of a Quantum Dash Semiconductor Laser», Naderi N. A., Pochet M., Grillot F., Terry N. B., Kovanis V., Lester L. F., IEEE Journal of Selected Topics in Quantum Electronics, 15 3 563-571 (2010) 10.1109/JSTQE.2009.2015334

  6. «rf linewidth reduction in a quantum dot passively mode-locked laser subject to external optical feedback», Lin C.-Y., Grillot F., Naderi N.A., Li Y., Lester L.F., Applied Physics Letters, 96 5 051118 (2010) 10.1063/1.3299714

  7. «A direct comparison of single-walled carbon nanotubes and quantum-wells based subpicosecond saturable absorbers for all optical signal regeneration at 1.55 µm», Nong H., Gicquel-Guézo M., Bramerie L., Perrin M., Grillot F., Levallois C., Maalouf A., Loualiche S., Applied Physics Letters, 96 6 061109 (2010) 10.1063/1.3309712

  8. «Analysis by high-resolution electron microscopy of elastic strain in thick InAs layers embedded in Ga0.47In0.53As buffers on InP(0 0 1) substrate», GATEL C., Tang H., Crestou C., Ponchet A., Bertru N., Doré F., Folliot H., Acta Materialia, 58 9 3238 (2010) 10.1016/j.actamat.2010.01.047

  9. «Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots», Ulloa J.-M., Koenraad P., Bonnet-Eymard M., Letoublon A., Bertru N., Journal of Applied Physics, 107 74309 (2010) 10.1063/1.3361036


The list of previous publications is available on HAL:


Publications: 2013,  2012,  2011,  2010   Conferences


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