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FOTON-OHM UMR CNRS 6082            




The research activity of the lab is structured around the following  topics :

  • Growth and study of Quantum dots based devices for laser applications in the telecommunications wavelength (1.55 µm)
In this subject, the laboratory develop InAs/InP quantum dots, in order to realise edge emitting lasers at a wavelength of 1.55 µm. In particular, the laboratory has obtained very low value of threshold current density in laser devices, being the world state of the art in QDs lasers emitting at 1.55 µm. These laser structures are now optimised in order to be integrated in high rate telecoms systems.
Contact : S. Loualiche
  • Optical micro-cavities and nanostructures-based tunable VCSELs for optical telecommunications.
The laboratory aims a great experience in the growth of micro-cavity, and in the epitaxial growth of multi quantum wells InGaAs/InP. These quantum wells inserted in cavities have shown a very short exciton lifetime (400 femtoseconds, which is actually the state of the art for such a system), thanks to the Iron inclusion in theses structures.
The very good quality of these micro-cavities is now used in order to study de recombination exciton lifetime in carbon nanotubes, and iti is also used to relaise QWs based vertical emitting devices (VCSELs), emitting at 1.55 µm. The later development of these VCSELs, mixed with the striking  property of liquid cristals  regarding the change of optical index, have allowed the laboratory to develop recently a tunable QWs based VCSEL, under optical injection. Injection of electric current will be the last difficult to get throught, before its integration into telecommunications sytems.
Contact : C. Paranthoën
  • Photonics III-V on Silicon (integration of optical devices on Silicon and photovolatics applications.)
More recently, the laboratory has studied the development of light emitters on Silicon. The chosen approach is the coherent growth of GaP on Silicon substrates. This growth, very difficult because of the fundamental difference between the two cristal structures of GaP and Si, could open the way for the development of photonics on Silicon, thus combining the good electronic properties of Silicon, which is already well-known by all the microelectronic industry, and the good optical properties of III-V compounds. This subject deals firstly with the development of the growth og GaP on Silicon, and secondly with the achievement of an active area, which could emit some light, deposited on GaP/Si.
In order to reach these promising objectives, the laboratory has just baught a third epitaxy reactor, for the growth of Silicon. Applications adressed by the subject are intership interconnexions and high efficiency photovoltaics applications.
Project coordinator  : O. Durand, C. Cornet
  • nanostructures based light emitters with inter-subband transitions for the mid-infrared

This research area aims to propose new intersubband nanostructures based light emitters, which could reach wavelength of 1.55 µm. The use of Sb-based alloys on InP substrates is promising to develop intersubband lasers.
Project coordinator : N. Bertru

  • nanothermal properties of semiconductors (recovery of thermal energy waste in semiconductors)
This research area, propose to develop a know-how in order to recover thermal wastes in all the semi-conductor devices, and helped by the thermoelectrics conversion, to generate electric current. III-V semiconductors are used, thus combining a good electric conductivity and high thermal resistivity. Nanostructures are then deposited on these III-V semiconductors, leading to a better carriers generation, and thus to a better conversion efficiency.
Project coordinator : H. Folliot


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