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FOTON-OHM UMR CNRS 6082            



Molecular Beam Epitaxy (MBE) (PDF poster)

The MBE-UHVCVD Cluster with ultra-high vacuum connexion


The laboratory aims 2 MBE experimental setups (a gas source MBE : GSMBE and a solid source MBE : SSMBE) mainly dedicated to the growth of III/V materials on InP, GaP and Si substrates (bulk, quantum wells or quantum dots). A large choice of alloys can be grown using these two MBE systems, with for instance GaInAsP, GaAlInAsP, or GaAsSb (still being studied). Other kind of alloys are also to be studied in a near future, like diluted nitrides GaAsPN.

***  Gas source MBE: pictures and basic principles:


transfer Chambers and introduction for samples                              back of the MBE system: growth chamber and conventional cells with gas lines

These apitaxial chambers are pumped in order to reach ultra-vacuum. The cells allow to send different kind of molecular beams onto the sample. The growth temperature at the sample level is controled by an oven. This procedure allows to deposit monoatomic layers one by one, and to form quantum nanostructures with a very high precision.

Basic principle of epitaxial systems : Gas source MBE :

*** Solid source MBE:


Transfer and epitaxial growth chambers

In this chamber, molecular beams arriving at the sample surface come from solid sources an not from gas source (see previous section). The growth principle is the same, but other additionnal materials can be deposited in an easy way, such as Sb or Al.



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